Part Number: C5706, 2SC5706

Function: 50V, 5A, NPN Transistor

Package: TP, TP-FA Type

Manufacturer: Sanyo Semiconductor

See the preview image and the PDF file for more information.

C5706 pinout ( Images )

Pinout: 1. Base  2. Collector  3. Emitter  4. Collector

 

Description

C5706 is 50V, 5A, NPN Epitaxial Planar Silicon Transistor. This Transistor is a type of bipolar junction transistor (BJT) made from silicon, a semiconductor material. This transistor is designed for amplifying or switching electronic signals in various electronic circuits.

 

Features

1. DC-DC converter, relay drivers, lamp drivers, motor drivers, strobes.

2. Adoption of FBET, MBIT process.

3. Large current capacitance.

4. Low collector-to-emitter saturation voltage.

5. High-speed switching.

6. High allowable power dissipation […]

3 page

Absolute Maximum Ratings at Ta=25°C

1. Collector-to-Base Voltage : VCBO = 80 V

2. Collector-to-Emitter Voltage : VCES = 80 V

3. Collector-to-Emitter Voltage : VCEO = 50 V

4. Emitter-to-Base Voltage : VEBO = 6 V

5. Collector Current : IC = 5 A

6. Collector Current (Pulse) : ICP = 7.5 A

7. Base Current : IB = 1.2 A

 

Applications

1. High Current Switching

C5706 PDF Datasheet

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C3150 has a maximum collector current of 3A and a maximum collector-emitter voltage of 800V. It is suitable for use in a wide range of electronic circuits that require high voltage and current handling capabilities. Its low noise and small package size make it suitable for use in amplifier circuits, while its high voltage and current handling capabilities make it suitable for use in power supply and high-voltage switching circuits.

Part Number: 2SC3150

Function: 800V, 3A, NPN Transistor

Package: TO-220C Type

Manufacturer: SavantIC Semiconductor

Images:

1 page

Description

C3150 is 800V, 3A, Silicon NPN Power Transistor. This Transistor is a type of bipolar junction transistor (BJT) made from silicon, a semiconductor material. This transistor is designed for amplifying or switching electronic signals in various electronic circuits.

Advantages

1. High voltage handling capabilities: The 800V maximum collector-emitter voltage makes this transistor suitable for use in circuits that require high voltage handling capabilities.

2. High current handling capabilities: The 3A maximum collector current makes this transistor suitable for use in circuits that require high current handling capabilities.

3. Low noise: The transistor has low noise characteristics, which makes it suitable for use in low noise amplifier applications.

Disadvantages

1. Slow switching speed: The C3150 has a relatively slow switching speed, which may not be suitable for use in circuits that require high-speed switching.

2. Limited power dissipation capabilities: The transistor has a limited power dissipation capability, which may limit its use in high-power applications.

Features

1. With TO-220C package

2. High breakdown voltage : VCBO=900V(Min)

3. Fast switching speed.

4. Wide ASO (Safe Operating Area)

 

3 page

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 900 V

2. Collector to Emitter Voltage: Vceo = 800 V

3. Emitter to Base Voltage: Vebo = 7 V

4. Collector Current: Ic = 3 A

5. Collector Dissipation : Pc = 50 W ( Tc=25°C )

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

Applications

1. 800V, 3A switching regulator

C3150 PDF Datasheet

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