Part Number: 2SD669

Function: 120V, 1.5A, NPN Transistor

Package: TO-126 MOD type

Manufacturer: Hitachi Semiconductor

Images:

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Description

D669 is 120V, 1.5A, Silicon NPN Epitaxial Transistor.

 

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol 2SD669, 2SD669A Unit

1. Collector to base voltage : VCBO 180, 180 V

2. Collector to emitter voltage : VCEO 120, 160 V

3. Emitter to base voltage : VEBO 5, 5 V

4. Collector current : IC 1.5, 1.5 A

5. Collector peak current : IC(peak) 3, 3 A

6. Collector power dissipation : PC 1 1 W PC*1 20, 20 W

7. Junction temperature : Tj 150 150 °C

8. Storage temperature: Tstg –55 to +150, –55 to +150 °C

 

Applications

1. Low frequency power amplifier complementary pair with 2SB649, 2SB649

D669 Datasheet

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This is one of the transistor types.

Part Number: TIP120

This product has 60V, 5A, NPN Transistor functions.

The package is TO-220 Type

The manufacturers of this product is WEITRON.

See the preview image and the PDF file for more information.

Images:

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Pinout: 1. Base  2. Collector  3. Emitter

Description

TIP120 is 60V, 5A, Silicon NPN Transistor.

 

Features

1. Medium Power Complementary silicon transistor

2. TIP120, TIP121, TIP122 Darlington TRANSISTOR (NPN)

3. TIP125, TIP126, TIP127 Darlington TRANSISTOR (PNP)

 

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Absolute Maximum Ratings (Ta = 25°C)

1. Collector-Base Voltage : VCBO = 60 V

2. Collector-Emitter Voltage : VCEO = 60 V

3. Emitter-Base Voltage :  VEBO = 5 V

4. Collector Current -Continuous : IC = 5 A

5. Collector Power Dissipation : PC = 2 W

 

TIP120 PDF Datasheet

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