NPN

What is C4977? – 400 V, 7A, NPN Power Transistor

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What is C4977?

This is a type of transistor that is commonly used in electronic circuits for amplification and switching applications. It is a bipolar junction transistor (BJT) that has a maximum collector current of 7A and a maximum collector-base voltage of 400V.

Part Number: C4977, 2SC4977

Function:  400 V, 7A, NPN Power Transistor

Package: TO-220F Type

Manufacturer: INCHANGE Semiconductor

Image and Pinouts:
C4977 datasheet

Description

This is 400V, 7A, NPN Transistor. It is a versatile transistor that can be used in a wide range of electronic circuits for amplification and switching purposes.

Advantages

1. High current gain: High current gain, which makes it suitable for use in low-power amplifier circuits.

2. High cutoff frequency: The transistor has a high cutoff frequency, which allows it to be used in high-frequency applications such as RF circuits and oscillators.

3. Low noise: It has low noise characteristics, making it ideal for use in audio amplifier circuits.

Applications:

Designed for use in high-voltage, high-speed, power switching in inductive circuit , they are particularly suited for 115 and 220V switchmode applications such as switching regulator’s, inverters, DC-DC converter.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 450 V

2. Collector to Emitter Voltage: Vceo = 400 V

3. Emitter to Base Voltage: Vebo = 8 V

4. Collector Current: Ic = 7 A

5. Collector Dissipation : Pc = 40 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

C4977 Datasheet PDF Download

C4977 pdf


Other data sheets are available within the file: 2SC4977

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C3507 Transistor – NPN, Equivalent, Datasheet (2SC3507)

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Part Number: C3507, 2SC3507

Function: 800V, 5A, NPN Transistor

Package: TOP-3F-A1 Type

Manufacturer: Panasonic

Images:

C3507 transistor

Description

This is Power Transistor. 2SC3507 is Silicon NPN triple diffusion planar type.

:

■ Features

• High-speed switching

• High collector-base voltage (Emitter open) VCBO

• Satisfactory linearity of forward current transfer ratio hFE

• Full-pack package which can be installed to the heat sink with one screw

■ Absolute 21.0±0.5 φ 3.2±0.1 15.0±0.2 (3.5) Solder Dip 2.0±0.2 1.1±0.1 2.0±0.1 0.6±0.2 Maximum Ratings TC = 25°C Symbol VCBO VCES VCEO VEBO IC IB ICP PC Tj Tstg Ta = 25°C Rating 1 000 1 000 800 7 5 3 10 80 3.0 150 −55 to +150 °C °C Unit V V V V A A A W Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (E-B short) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Base current Peak collector current Collector power dissipation 16.2±0.5 5.45±0.3 10.9±0.5 1 2 3 1: Base 2: Collector 3: Emitter EIAJ: SC-92 TOP-3F-A1 Package Junction temperature Storage temperature

■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-emitter sustaining voltage – Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Turn-on time Storage time Fall time Symbol Conditions

C3507 transistor datasheet panasonic

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage : Vcbo = 1000 V

2. Collector to Emitter Voltage : Vceo = 800 V

3. Emitter to Base Voltage : Vebo = 7 V

4. Collector Current : Ic = 5 A

5. Total Dissipation : Pc = 80 W

6. Junction Temperature : Tj = 150°C

7. Storage Temperatue : Tsg = -55 ~ +150°C

Applications:

1. High breakdown voltage high-speed switching

C3507 PDF Datasheet

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