NPN

MMBT2222A Datasheet – NPN Switching Transistor – Philips

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This is NPN Transistor with 600mA, 40V, SOT-23 Type.

Part Number: MMBT2222A, Marking Code : 7C*

Function: NPN Switching Transistor

Package: SOT-23 Type

Manufacturer: Philips Electronics ( https://www.nxp.com/ )

Philips Electronics spun off its division into a separate company called NXP Semiconductors in 2006, making it an independent, publicly traded company.

Image and Pinouts:

MMBT2222A datasheet

What is MMBT2222A?

This is a surface mount version of the popular 2N2222A bipolar junction transistor (BJT). Like the 2N2222A, the MMBT2222A is an NPN type transistor that is commonly used in electronic circuits for amplification, switching, and other applications.

This is NPN switching transistor in a SOT23 plastic package. PNP complement: PMBT2907A.

Features

1. High current (max. 600 mA)
2. Low voltage (max. 40 V).
3. Good gain characteristics
4. Fast switching speeds
5. Reliable performance

Advantages vs Disadvantages

Advantages:

1. Small size and surface mount package make it suitable for compact electronic designs where space is limited

2. Good gain characteristics and fast switching speeds make it suitable for a wide range of electronic applications

Disadvantages:

1. Limited voltage and current ratings compared to other transistors, which makes it unsuitable for high-power applications

2. May require additional components such as resistors and capacitors to achieve desired performance

 

Absolute Maximum Ratings

1. collector-base voltage open emitter : VCBO = 75 V
2. collector-emitter voltage open base :VCEO = 40 V
3. emitter-base voltage open collector : VEBO = 6 V
4. collector current (DC) : IC = 600 mA
5. peak collector current : ICM = 800 mA
6. peak base current :IBM = 200 mA
7. total power dissipation : Ptot = 250 mW

Applications

1. Switching and linear amplification.

FAQs:

Q: What is the difference with 2N2222A?

A: The MMBT2222A is a surface mount version of the 2N2222A, with a slightly lower voltage and current rating. They have similar features and characteristics but differ in their packaging.

Q: What is the maximum frequency at which this transistor can operate?

A: The MMBT2222A has a maximum frequency rating of 300 MHz, which is the same as the 2N2222A.

Other data sheets are available within the file: MMBT2222

MMBT2222A Datasheet PDF Download

MMBT2222A pdf


 

MJE13003 Datasheet PDF – 400V, 1.5A, NPN Transistor – UTC

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What is MJE13003?

This is an NPN bipolar junction transistor designed for high-voltage, high-speed power switching applications. It has a maximum collector-emitter voltage rating of 400V and a maximum collector current rating of 1.5A.

Part Number: MJE13003

Function: 400V, 1.5A, Power Transistor

Package: TO-220, TO-251, TO-126, TO-252

Manufacturer: Unisonic Technologies

Image and Pinouts:

MJE13003 datasheet pdf

 

Description

This is 400V, 1.5A, NPN Silicon Power Transistor. These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode.

Features

1. Reverse biased SOA with inductive load @ TC=100°C

2. Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C Typical tC = 290ns @ 1A, 100°C.

3. 700V blocking capability

Advantages Vs Disadvantages

Advantages:

It is high voltage and current ratings, which make it suitable for use in high-power applications. It also has a fast switching speed, which allows for efficient power conversion.

Disadvantages:

This is its relatively low collector current rating compared to other power transistors on the market. This may limit its use in some high-power applications.

Additionally, it may require additional circuitry, such as a flyback diode, to protect against voltage spikes during switching.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 700 V

2. Collector to Emitter Voltage: Vceo = 400 V

3. Emitter to Base Voltage: Vebo = 9 V

4. Collector Current: Ic = 1.5 A

5. Collector Dissipation : Pc = 1.4 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

Applications:

1. Switching regulator’s, inverters

2. Motor controls

3. Solenoid/relay drivers

4. Deflection circuits

Other data sheets are available within the file: 13003BR, 13003G, 13003L, MJE13003-TO-126

MJE13003 Datasheet PDF

MJE13003 pdf


 

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