Part Number: C2551

Function: 300V, 100mA, NPN Transistor

Package: TO-92 Type

Manufacturer: Toshiba

Image and Pinouts:

 

Description

This is 300V, 100mA, Silicon NPN Power Transistor.

Features

•  High voltage: VCBO= 300 V, VCEO= 300 V

•  Low saturation voltage: VCE (sat)= 0.5 V (max)

•  Small collector output capacitance: Cob= 3 pF (typ.)

•  Complementary to 2SA1091.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 300 V

2. Collector to Emitter Voltage: Vceo = 300 V

3. Emitter to Base Voltage: Vebo = 6 V

4. Collector Current: Ic = 100 mA

5. Collector Dissipation : Pc = 400 mW

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

C2551 Datasheet PDF Download

Other data sheets are available within the file: 2SC2551

Part Number: BLV21, Order Code : ASI10579

Function: NPN Silicon RF Power Transistor

Package: SOT-123 Type

Manufacturer: Advanced Semiconductor

Image and Pinouts:

 

Description

The ASI BLV21 is Designed for Class C, 28 V High Band Applications up to 175 MHz.

Features

1. Common Emitter

2. PG = 10 dB at 15 W/175 MHz

3. Omnigold Metalization System

Maximum Ratings :

1. Collector Current, IC : 1.75 A

2. Collector to Base Voltage, VCEO : 35 V

3. VCES : 65 V

4. Emitter to Base Voltage, VEBO : 4.0 V

5. PDISS : 36 W @ TC = 25 °C

6. Junction Temperature, TJ : -65 °C to +200 °C

7. Storage Temperature, TSTG : -65 °C to +150 °C

8. θJC : 4.8 °C/W

BLV21 Datasheet PDF Download

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