BDW23 Datasheet – 45V, 6A, NPN Transistor – Fairchild

Part Number: BDW23

Function: 45V, 6A, NPN Transistor

Package: TO-220 Type

Manufacturer: Fairchild Semiconductor

Fairchild Semiconductor is a company that designs and manufactures a wide range of semiconductor devices, including integrated circuits, power transistors, diodes, and optoelectronics.

Today, Fairchild Semiconductor is part of ON Semiconductor, a leading supplier of power management and semiconductor solutions.

Image and Pinouts:

BDW23 datasheet

 

Description

The BDW23 is General purpose NPN Darlington transistor.

1. Forward Biased: In order to operate, the base-emitter junction of an NPN transistor must be forward biased, meaning that the base must be connected to a positive voltage relative to the emitter.

2. High Input Impedance: NPN transistors have a high input impedance, which means that they are less likely to draw current from the input source, and are therefore less likely to cause a drop in voltage across the source.

3. Inverted Output: NPN transistors are known for producing an inverted output relative to their input. That is, if the input signal is high, the output signal will be low, and vice versa. This behavior is due to the way the transistor is designed and is an important characteristic for many electronic applications.

Features

1. Power Darlington TR

2. Complement to BDW24, BDW24A, BDW24B and BDW24C respectively

BDW23 fairchild

Absolute Maximum Ratings

1. Collector-Base Voltage: Vcbo = 45 V
2. Collector-Emitter Voltage: Vceo = 45 V
3. Emitter-Base Voltage: Vebo = 5 V
4. Collector Current (DC) : Ic = 6 A
5. Collector Dissipation : Pc = 50 W

Applications:

1. Hammer Drivers, Audio Amplifier

Other data sheets are available within the file: BDW23A, BDW23B, BDW23C

 

BDW23 Datasheet PDF Download

BDW23 pdf

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H1061 Datasheet PDF – 80V, 4A, NPN Transistor

Part Number: H1061

Function: 80V, 4A, NPN Transistor

Package: TO-220AB Type

Manufacturer: PMC Components

Image and Pinouts:

H1061 Pinout

 

Description

The H1061 is  designed for low frequency power amplifier.

This is 80V, 4A, Triple Diffused Silicon NPN Transistor.

 

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 100 V

2. Collector to Emitter Voltage: Vceo = 80 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 4 A

5. Collector Power Dissipation : Pc = 40 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

H1061 Datasheet

Applications:

1. HIGH POWER DISSIPATION

2. MEDIUM SPEED POWER SWITCHING

H1061 Datasheet

H1061 pdf


 

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