NPN archives - Page 211 of 1048

Part Number: C3021

Function: 17V, 2A, RF Power NPN Transistor

Package: T-31E Type

Image and Pinouts:

C3021 datasheet

Description

This is RF Power NPN Epitaxial Planar Type Transistor.

The C3021 is a silicon NPN epitaxial planar type transistor specifically designed for UHF power amplifier applications.

1. High power gain : Gpe > 7.6 dB @ Vcc = 12.5V, f = 520 Mhz, Pin = 1.2 W

2. Emitter ballasted construction

3. Flange type ceramic package

Absolute maximum ratings

1. Collector to base voltage : Vcbo = 35 V

2. Emitter to base voltage : Vebo = 4 V

3. Collector to emitter voltage : Vceo = 17 V

4. Collector current : Ic = 2A

5. Collector dissipation : Pc = 20 W

Application:

For output stage of 5W power amplifier and drive stage of higher power amplifier in UHF band.

Other data sheets are available within the file: 2SC3021

Description

This is 20V, 100mA, Silicon NPN Epitaxial Transistor.

Absolute maximum ratings ( Ta=25°C )

1. Collector to base voltage VCBO : 30 V

2. Collector to emitter voltage VCEO : 20 V

4. Emitter to base voltage VEBO : 3V

5. Collector current IC : 100 mA

6. Collector power dissipation PC : 600 mW

7. Junction temperature Tj : 150 °C

8. Storage temperature Tstg : – 55 to +150 °C

Application:

1. High Frequency amplifier