Part Number: C3021

Function: 17V, 2A, RF Power NPN Transistor

Package: T-31E Type

Manufacturer: MITSUBISHI ELECTRIC

Image and Pinouts:

 

Description

This is RF Power NPN Epitaxial Planar Type Transistor.

The C3021 is a silicon NPN epitaxial planar type transistor specifically designed for UHF power amplifier applications.

Features

1. High power gain : Gpe > 7.6 dB @ Vcc = 12.5V, f = 520 Mhz, Pin = 1.2 W

2. Emitter ballasted construction

3. Flange type ceramic package

Absolute maximum ratings

1. Collector to base voltage : Vcbo = 35 V

2. Emitter to base voltage : Vebo = 4 V

3. Collector to emitter voltage : Vceo = 17 V

4. Collector current : Ic = 2A

5. Collector dissipation : Pc = 20 W

Application:

For output stage of 5W power amplifier and drive stage of higher power amplifier in UHF band.

 

Other data sheets are available within the file: 2SC3021

C3021 Datasheet PDF Download

Part Number: 2SD2499

Function: 600V, 6A, NPN Transistor

Package: TO-3P, 2-16E3A Type

Manufacturer: Toshiba

Image

Description

This is 600V, 6A, Silicon NPN Transistor.

Features

1. High Voltage  : VCBO= 1500 V

2. Low Saturation Voltage  : VCE (sat) = 5 V (Max.)

3. High Speed  : tf= 0.3 µs (Typ.)

4. Bult-in Damper Type

5. Collector Metal (Fin) is Fully Covered with Mold Resin.

Maximum ratings ( Tc=25°C )

1. Collector-Base Voltage : VCBO = 1500 V

2. Collector-Emitter Voltage : VCEO = 600 V

3. Emitter-Base Voltage : VEBO = 5 V

4. Base Current : IB = 3 A

5. Collector Power Dissipation : PC = 50 W

Image and Pinouts:

Applications:

1. HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV

Other data sheets are available within the file: D2499

2SD2499 Datasheet PDF Download

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