Part Number: BU808DFI

Function: 700V, 8A, NPN POWER DARLINGTON TRANSISTOR

Package: ISOWATT 218 Type

Manufacturer: ST Microelectronics

Image

 

Description

This is 700V, 8A, NPN Darlington Transistor.

The BU808DFI is a NPN transistor in monolithic Darlington configuration. It is manufactured using Multiepitaxial Mesa technology for cost-effective high performance.

 

Features

1. STMicroelectronics PREFERRED SALESTYPE

2. NPN MONOLITHIC DARLINGTON WITH INTEGRATED FREE-WHEELING DIODE

3. HIGH VOLTAGE CAPABILITY ( > 1400 V )

4. HIGH DC CURRENT GAIN ( TYP. 150 )

5. U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N))

6. LOW BASE-DRIVE REQUIREMENTS

7. DEDICATED APPLICATION NOTE AN1184

 

Pinout and Schematic :

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 1400 V

2. Collector to Emitter Voltage: Vceo = 700 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 8 A

5. Total Dissipation : Ptot = 52 W ( Tc=25°C )

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -65 ~ +150°C

 

Applications:

1. HIGH VOLTAGE FAST-SWITCHING

BU808DFI Datasheet PDF

 

Related articles across the web

• “I’m Back,” Says EE Times Blogger Adam Carlson
• Microchip Introduces $11 RN2483 & RN2903 LoRa Modules and $70 LoRa Evaluation Kits for IoT & M2M Applications