Part Number: 2SD1714

Function: 140V, 7A, Silicon NPN Power Transistor

Package: TO-3PF Type

Manufacturer: Inchange Semiconductor

Image and Pinouts:

 

Description

The 2SD1714 is a NPN bipolar junction transistor (BJT) manufactured by Inchange Semiconductor.
BJTs are widely used as amplifiers and switches in a variety of electronic circuits, including audio amplifiers, power amplifiers, and switching regulators.

Features

1. Collector-Emitter Breakdown Voltage : V(BR)CEO = 140V(Min.)

2. Good Linearity of hFE

3. Wide Area of Safe Operation

4. Complement to Type 2SB1159

Absolute Maximum Ratings :

1. Collector-Base Voltage : VCBO = 140 V

2. Collector-Emitter Voltage : VCEO = 140 V

3. Emitter-Base Voltage : VEBO = 5 V

4. Collector Current-Continuous : IC = 7 A

5. Collector Current-Pulse : ICP = 12 A

6. Collector Power Dissipation @ Tc=25°C : Pc = 80 W

7. Collector Power Dissipation @ Ta=25°C : Pc = 3 W

Applications:

1. Designed for high power amplifier applications.

Other data sheets are available within the file: D1714

 

2SD1714 Datasheet PDF Download

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Part Number: C4475

Function: 1800V, 3mA, NPN Transistor

Package: TO-220AB Type

Manufacturer: SANYO (Panasonic)

Image and Pinouts:

 

Description

The C4475 is 1800V, 3mA, NPN Silicon Transistor.

 

Features

1. High breakdown voltage (Vceo min=1800V).

2. Small Cob(Cob typ=1.4pF).

3. Wide ASO.

4. High reliability (Adoption of HVP process).

Absolute Maximum Ratings at Ta = 25°C

1. Collector-to-Base Voltage : VCBO = 2000 V
2. Collector-to-Emitter Voltage : VCEO = 1800 V
3. Emitter-to-Base Voltage : VEBO = 5 V
4. Collector Current : IC = 3 mA
5. Collector Current (Pulse) : ICP = 10 mA
6. Collector Dissipation : PC = 1.75 W

Applications:

1. High voltage amplifier.

2. High voltage switching.

3. Dynamic focus

 

Other data sheets are available within the file: 2SC4475

C4475 Datasheet PDF Download