Part Number: MJ1001
Function: 80V, NPN Silicon Power Darlington Transistor
Package: TO-3 Type
Manufacturer: Central Semiconductor
Pinouts:
Description
The MJ1000, MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and switching applications.
Their complementary PNP types are the MJ900 and MJ901 respectively. Compliance to RoHS
Absolute maximum ratings
1. Current Collector : Ic = 8.0 A
2. Power Dissipation : Pd = 90 W
3. Collector Base Voltage: Vcbo = 80 V
4. Collector Emitter Voltage: Vceo = 80 V
5. Emitter-Base Voltage: Vebo = 5.0 V
Applications
For use as output devices in complementary general purpose amplifier applications
Other data sheets are available within the file: BUY69C, MJ1000, MJ10001, MJ10005, MJ3000,
MJ3001, MJ4033, MJ4034, MJ4035, MJ10012, MJ10023, MJ11012, MJ11014
MJ1001 Datasheet PDF Download
