TPT5609 Datasheet – Vceo=20V, NPN Silicon Transistor

TPT5609 is NPN Epitaxial Silicon Transistor.

The package is TO-92L type. ( tpt 5609 transistor )

The manufacturer of the product is Micro Commercial Components.

See the preview image and the PDF file for more information.

Images:TPT5609 pinout datasheet

Description

This is 25V, 1A, NPN Transistor. An NPN Epitaxial Silicon Transistor is a specific type of bipolar junction transistor (BJT) that uses NPN (Negative-Positive-Negative) configuration and is fabricated using epitaxial silicon technology. This type of transistor is widely used in electronic circuits for amplification, switching, and signal processing.

It consists of three terminals: the emitter, the base, and the collector. When a small current is applied to the base-emitter junction, it controls the flow of current between the collector and the emitter. The transistor amplifies signals or acts as an electronic switch depending on how it is biased and connected in a circuit.

NPN epitaxial silicon transistors are widely used in various electronic applications, including audio amplifiers, radio frequency circuits, power supplies, and digital logic circuits. Their characteristics, such as high gain, fast switching speeds, and good linearity, make them versatile components for a range of circuit designs.

Features:

1. Excellent linearity of Current Gain
2. Low saturation voltage
3. Halogen free available upon request by adding suffix “-HF”

 

Maximum Ratings:

1. Collector-Emitter Voltage : VCEO = 20 V
2. Collector-Base Voltage : VCBO = 25 V
3. Emitter-Base Voltage : VEBO  = 5.0 V
4. Collector Current : IC = 1.0 A
5. Collector power dissipation : PC  = 0.75 W
6. Junction Temperature : TJ = -55 to +150 OC
7. Storage Temperature : TSTG  = -55 to +150 OC

TPT5609 pdf

TPT5609 PDF Datasheet

D13009K Datasheet PDF – 400V, 12A, NPN Power Transistor

This is one of the transistor types. A Silicon NPN Transistor is a type of bipolar junction transistor (BJT) made from silicon, a semiconductor material. This transistor is designed for amplifying or switching electronic signals in various electronic circuits.

Part Number: D13009K, 3DD13009K

Function: NPN bipolar power transistor ( 12A, 400V )

Package: TO-220C, TO-3PB

Manufacturer: Jilin Sino Microelectronics ( http://www.hwdz.com.cn/ )

Image and Pinouts:

D13009K datasheet

Description

D13009K is a high voltage fast switching power transistor that falls under the category of NPN transistors. The collector current of this device is 12A which projects it can endure load under 12A. This chip is mainly used in amplification and switching applications

Features

1. High pressure

2. High current capacity

3. High switching speed

4. High reliability

5. High-frequency switching power supply

6. Ultrasonic Generator

7. High-frequency power conversion

8. General power amplifier circuit

Applications

1. Energy-saving light

2. Electronic ballasts

3. High frequency switching power supply

4. High frequency power transform

5. Commonly power amplifier

Marking Information

D13009K Main Characteristics

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 700 V

2. Collector to Emitter Voltage: Vceo = 400 V

3. Emitter to Base Voltage: Vebo = 9 V

4. Collector Current: Ic = 12 A

5. Collector Dissipation: Pc = 100 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

Other data sheets are available within the file: 3DD13009K-O-C-N-B, 3DD13009K-O-AB-N-B

D13009K Datasheet PDF Download


 

D13009K pdf

Posts related to ‘ NPN ~ ‘

Part number Description
KTD1304 VEBO = 12V, Silicon NPN Transistor
D1367 16V, 2A, NPN Transistor – Hitachi
D1351 Vcbo=60V, Ic=3A, NPN Transistor – KEC
BD136 45V, 1.5A, PNP Power Transistor
D1302 20V, 0.5A, NPN Transistor – Panasonic
D13009K 400V, 12A, NPN Power Transistor
3DD13009 Vceo=400V, 12A, NPN Transistor
BD136 1.5A, 45V, PNP Transistor – Fairchild
HLD133D 400V, 2A, NPN Transisor – HF-SEMI
D1351 60V, 3A, NPN Transistor – 2SD1351

 

Related articles across the web