Part Number: 2SJ334

Function: -30A, -60V, P-CHANNEL MOSFET Transistor

Package: TO-220 Type

Manufacturer: Toshiba

Pinouts:

Description

TOSHIBA Field Effect Transistor, Silicon P Channel MOS Type

Absolute maximum ratings ( Ta=25°C )

1. Drain−source voltage: VDSS = -60 V
2. Drain−gate voltage (RGS = 20 kΩ): VDGR = -60 V
3. Gate−source voltage: VGSS = ±20 V
4. Drain current : ID = -30 A
5. Drain power dissipation (Tc = 25°C): PD = 45 W
6. Single pulse avalanche energy : EAS = 936 mJ
7. Avalanche current : IAR = -30 A
8. Repetitive avalanche energy : EAR = 4.5 mJ
6. Channel Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C

 

Applications

1. HIGH SPEED
2. HIGH CURRENT SWITCHING
3. DC-DC CONVERTER
4. RELAY DRIVE AND MOTOR DRIVE

Other data sheets are available within the file: J334

2SJ334 Datasheet PDF Download

 

Part Number: NCE55P30

Function : P-Channel Enhancement Mode Power MOSFET

Package: TO-220-3L Type

Manufacturer: NCE ( http://www.ncepower.com )

Image

Description

The NCE55P30 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

Pinout

General Features

1. VDS = -55V, ID = -30A
RDS(ON)<40mΩ@ VGS=-10V
2. High density cell design for ultra low Rdson
3. Fully characterized avalanche voltage and current
4. Good stability and uniformity with high E AS
5. Excellent package for good heat dissipation

Application

1. Power switching application
2. Hard switched and high frequency circuits
3. Uninterruptible power supply

NCE55P30 Datasheet