PNP

2SA1962 Datasheet PDF – 230V, 15A, PNP Transistor – Toshiba

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Part Number: 2SA1962

Function: Power transistor for high-speed switching applications

Pacakge : 2-16C1A Type

Manufacturer: Toshiba

Image and Pinouts:

2SA1962 datasheet

Description

This is -230V, -15A, Silicon PNP Triple Diffused Type Transistor.

Features

1. High breakdown voltage: VCEO= -230 V (min)

2. Complementary to 2SC5242

3. Recommended for 80-W high-fidelity audio frequency amplifier output stage.

components

Absolute Maximum Ratings (Ta = 25°C)

1. Collector-base voltage : VCBO = -230 V
2. Collector-emitter voltage : VCEO = -230 V
3. Emitter-base voltage : VEBO = -5 V
4. Collector current : IC = -15 A
5. Base current : IB = -1.5 A
6. Collector power dissipation (Tc = 25°C) : PC = 130 W

2SA1962 Datasheet PDF Download


2SA1962 pdf

Other data sheets are available within the file: A1962-O, A1962-O(Q), 2SA1962OQ, A1962

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2SA1941 Datasheet – (-)140V, (-)10A, PNP Transistor ( PDF )

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Part Number: 2SA1941

Function: – 140V, – 10A, PNP Transistor

Package: TO-3P Type

Manufacturer: Toshiba

See the preview image and the PDF file for more information.

2SA1941 Pinout

2SA1941 datasheet

 

Description

This is Silicon PNP Triple Diffused Type Transistor.

Features

• High breakdown voltage: VCEO= −140 V (min)
• Complementary to 2SC5198
• Recommended for 70-W high-fidelity audio frequency amplifier output stage.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = – 140 V
2. Collector to Emitter Voltage: Vceo = – 140 V
3. Emitter to Base Voltage: Vebo = – 5V
4. Collector Current: Ic = – 10 A
5. Total Dissipation : Pc = 100 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C

Applications:

1. Power Amplifier

Other data sheets are available within the file: A1941

2SA1941 Datasheet PDF Download


2SA1941 pdf