2N5415 Datasheet – 200V, 1A, TO-39, PNP Transistor – ST

Part Number: 2N5415

Function: -200V, -1A, SILICON PNP TRANSISTOR

Package: TO-39 Type

Manufacturer: STMicroelectronics

Image and Pinouts:

2N5415 datasheet

Description

The 2N5415, 2N5416 are high voltage silicon epitaxial planar PNP transistors in Jedec TO-39 metal case designed for use in consumer and industrial line-operated applications. These devices are particularly suited as drivers in high-voltage low current inverters, switching and series regulators.

Features

1. STMicroelectronics PREFERRED SALESTYPES
2. PNP TRANSISTOR

Absolute Maximum Ratings

1. Collector-Base Voltage (IE = 0) : Vcbo = -200 V
2. Collector-Emitter Voltage (IB = 0) : VCEO = -200 V
3. Emitter-Base Voltage (IC = 0) : VEBO = -4 V
4. Collector Current : IC = -1 A
5. Base Current : IB = -0.5 A

components

 

Other data sheets are available within the file: 2N5416

2N5415 Datasheet PDF Download

2N5415 pdf

C9015 Datasheet – (-)50V, (-)150mV, PNP Transistor, KTC9015

This is PNP Transistor.

Part Number: C9015, KTC9015

Function: -50V, -150mA, Silicon PNP Transistor

Package: TO-92 Type

Manufacturer: KEC

Image
C9015 pnp transistor

Description

This is -50V, -150mA, Epitaxial Planar PNP Transistor.

 

Features

1. Excellent hFE Linearity : hFE( Ic=0.1mA)/ hFE( Ic=2mA) = 0.95(Typ.)

2. Low Noise : NF =  1dB(Typ.) at f = 1kHZ

3. Complementary to KTC9014

Pinout

C9015 datasheet pdf pinout

 

Maximum Ratings ( Ta = 25°C )

1. Collector-Base Voltage: Vcbo = – 50V

2. Collector-Emitter Voltage: Vceo = – 50V

3. Emitter-Base Voltage : Vebo = – 5V

4. Collect Current: Ic = – 150mA

5. Eimitter Currnet : Ie = 150 mA

6. Collector Power Dissipation : Pc = 625 mW

 

Application:

1. General Purpose

2. Switching

 

 

C9015 Datasheet


 

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