2SA1259 Datasheet PDF – 60V, 5A, PNP Transistor – Sanyo

Part Number: 2SA1259

Function: -60V, -5A, PNP Transistor

Package: TO-220AB Type

Manufacturer: SANYO (Panasonic)

Image and Pinouts:

2SA1259 datasheet

 

Description

This is -60V, -5A, PNP Epitaxial Planar Silicon Darlington Transistor.

Features

1. High fT.

2. High switching speed.

3. Wide ASO.

Absolute Maximum Ratings at Ta = 25°C

1. Collector-to-Base Voltage : VCBO = – 70 V
2. Collector-to-Emitter Voltage : VCEO = – 60 V
3. Emitter-to-Base Voltage : VEBO = – 5 V
4. Collector Current : IC = – 5 A
5. Collector Current Pulse : ICP = – 8 A
6. Collector Dissipation : PC 1.75 W

 

Applications:

1. High-Speed Driver

 

Other data sheets are available within the file: 2SC3145, A1259, C3145

2SA1259 Datasheet PDF Download


2SA1259 pdf

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2SA1032 Datasheet PDF- 50V, 100mA, Silicon PNP Transistor

Part Number: 2SA1032

Function: -50V, -100mA, PNP Transistor

Package: TO-92 type

Manufacturer: Renesas Electronics

Image and Pinouts:

2SA1032 datasheet

Description

This is -50V, -100mA, Silicon PNP Epitaxial Transistor.

The 2SA1032 is a bipolar junction transistor (BJT) commonly used in electronic circuits. It is a PNP transistor and is commonly used for general-purpose amplification and switching applications. The transistor has a maximum collector current of -100A, a maximum collector-emitter voltage of -50V, and a maximum power dissipation of 100mW.

Features

1. Low frequency low noise amplifier

2. Complementary pair with 2SC458 (LG) and 2SC2310

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to base voltage : VCBO = –55 V

2. Collector to emitter voltage : VCEO = –50 V

3. Emitter to base voltage : VEBO = –5 V

4. Collector current : IC = –100 mA

5. Emitter current : IE = 100 mA

6. Collector power dissipation : PC = 300 mW

 

2SA1032 Datasheet PDF

2SA1032 pdf


 

Other data sheets are available within the file: 2SA1031, A1031, A1032

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