Part Number: 2SA940

Function: 1.5Ampere, PNP Silicon Power Transistor

Package: TO-220 Type

Manufacturer: Mospec Semiconductor

Image and Pinouts:

 

Description

2SA940 transistor is designed for use in general purpose power amplifier, vertical output application.

Features

1. Collector-Emitter Volate : Vceo = 150V(Min)

2. DC Current Gain : hFE = 40-140@ Ic = 500mA

3. Complemenetrary NPN 2SC2073

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 150 V

2. Collector to Emitter Voltage: Vceo = 150 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 1.5 A

5. Collector Dissipation : Pc = 25 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

 

2SA940 Datasheet PDF Download

Other data sheets are available within the file: A940

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Part Number: A101, 2SA101

Function: 40V, 10mA, PNP Transistor

Package: JEDEC ( TO-1 )

Manufacturer: Mitsubishi

Image :

Description

The 2S101 is 40V, 10mA, Silicon PNP Transistor.

The A101 is a type of bipolar junction transistor (BJT). A BJT is a three-layer semiconductor device that is commonly used as a switch or amplifier in electronic circuits. The “2SA101” designation is the part number for this specific BJT, and the “2S” prefix indicates that it is a PNP-type transistor, while the “A” suffix often signifies the manufacturer’s specific device type code.

 

Features

1. High fab

 

Image and Pinout:

 

Absolute Maximum Ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = – 40 V

2. Emitter to Base Voltage: Vebo = – 0.7 V

3. Collector Current: Ic = – 10 mA

4. Collector Dissipation : Pc = 60 mW

 

Applications:

1. RF Amplifier

2. IF Amplifier

Other data sheets are available within the file: 2SA100, 2SA102, 2SA103, 2SA104, A100, A102, A103, A104

A101 Datasheet PDF

 

 

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