2SA505 Datasheet – A505, 60V, 1A, PNP Transistor – Toshiba

Posted on May 21, 2022November 9, 2022 by pinout

Part Number: 2SA505

Function: -60V, -1A, SILICON PNP EPITAXIAL TYPE TRANSISTOR

Package: TO-126 Type

Manufacturer: Toshiba Semiconductor

Image and Pinout:

Description

This is -60V, -1A, Silicon PNP Transistor.

Features

1. Low Collector Saturation Voltage : Vce(sat) = – 0.32V ( Typ.)

2. Complementary to 2SC495 and 2SC496.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = – 60 V
2. Collector to Emitter Voltage: Vceo = – 50 V
3. Emitter to Base Voltage: Vebo = – 5 V
4. Collector Current: Ic = – 1 A
5. Collector Dissipation : Pc = 1 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C

Applications:

1. Medium Power Amplifier

2SA505 Datasheet

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A1758 Datasheet PDF – 60V, 12A, PNP Transistor, 2SA1758 – Rohm

Posted on May 20, 2022February 4, 2023 by pinout

Part Number: A1758, 2SA1758

Function: -60V, -12A, PNP Transistor

Package: TO-220FP Type

Manufacturer: Rohm, SavantIC

Image

Description

This is -60V, -12A, Silicon PNP Power Transistor.

A PNP transistor is a type of bipolar junction transistor (BJT) that has a “positive-negative-positive” (PNP) configuration.

The term “PNP” refers to the polarities of the three regions in the transistor: the P-type base, the N-type collector, and the P-type emitter.

Features

1. Low collector saturation voltage

2. Wide area of safe operation

Pinout

Applications:

1. For power switching applications

Specification

Absolute maximum ratings (Ta=25℃)

1. Collector-base voltage : VCBO = -100V

2. Collector-emitter voltage : VCEO = -60V

3. Emitter-base voltage : VEBO = -5V

4. Collector current : IC = -12A

5. Collector power dissipation(TC=25℃) : PC = 30W

A1758 Datasheet PDF

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