This post explains for the diode.
The Part Number is MBR30H100CTG, MBRF30H100CTG
The Marking : B30H100G
The function of this semiconductor is Switch-mode Power Rectifier.
The package is TO-220 Type
Manufacturer: ON Semiconductor
Preview images :
1 page
Description
B30H100G is 100V, 30A, Switch‐mode Power Rectifier.
The Schottky Barrier Diode (SBD) is formed by the junction of a metal contact and a semiconductor material, typically silicon or gallium arsenide. Unlike a p-n junction diode, which uses a p-type and an n-type semiconductor material, the SBD uses a metal and a semiconductor material. The metal is chosen for its low work function, which results in a small barrier height at the metal-semiconductor interface, allowing for efficient carrier injection.
The main advantage of an SBD is its fast switching speed and low forward voltage drop, which makes it ideal for high-frequency and high-speed applications. However, SBDs have a relatively low reverse voltage rating compared to p-n junction diodes and can suffer from thermal instability due to the metal-semiconductor interface.
Features and Benefits :
1. Low Forward Voltage: 0.67 V @ 125°C
2. Low Power Loss/High Efficiency
3. High Surge Capacity
4. 175°C Operating Junction Temperature
5. 30 A Total (15 A Per Diode Leg)
6. These are Pb−Free Devices
Applications:
1. Power Supply – Output Rectification
2. Power Management
3. Instrumentation
B30H100G PDF Datasheet
