K2749 Datasheet – 900V, N-ch MOSFET – Toshiba

Part Number: K2749, 2SK2749

Function: Silicon N Channel MOSFET

Package: TO-3P, 2-16C1B Type

Manufacturer: Toshiba

Images:

K2749 Datasheet mosfet

Features

1. Low drain−source ON resistance : RDS (ON) = 1.6 Ω (typ.)
2.High forward transfer admittance : |Yfs| = 5.0 S (typ.)
3. Low leakage current : IDSS = 100 μA (max) (VDS = 720 V)
4. Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Pinout

K2749 pinout

Absolute Maximum Ratings

1. Drain−source voltage: VDSS = 900 V
2. Drain−gate voltage (RGS = 20 kΩ): VDGR = 900 V
3. Gate−source voltage: VGSS = ±30 V
4. Drain power dissipation (Tc = 25°C): PD = 150 W
5. Single pulse avalanche energy : EAS = 682 mJ
6. Avalanche current : IAR = 7 A
7. Repetitive avalanche energy : EAR = 15 mJ

Applications

Chopper Regulator, DC−DC Converter and Motor Drive

 

K2749 Datasheet


 

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C2036 Datasheet PDF – 80V, 1A, NPN Transistor – Toshiba

Part Number: C2036

Function: 1A, 80V, Silicon NPN Epitaxial Type(PCT Process)

Package : TO-126 Type

Manufacturer: Toshiba

Pinouts:

C2036 datasheet

Description

1. 27Mhz RF Power Amplifier Applications
2. Recomended for 1W Mobile Radio Output Stage and Driver Stage of 4W Transmitter.

Absolute maximum ratings ( Ta=25°C  )

1. Collector to Base Voltage: Vcbo = 80 V
2. Collector to Emitter Voltage: Vceo = 80 V
3. Emitter to Base Voltage: Vebo = 5 V
4. Collector Current: Ic = 1 A
5. Total Dissipation : Pc = 1 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C

components

Other data sheets are available within the file: 2SC2036

C2036 Datasheet PDF Download


C2036 pdf