2SK2662 Datasheet PDF – 500V, 5A, MOSFET, Transistor

Part Number: 2SK2662

Function: 500V, 5A, Silicon N Channel MOSFET

Package: TO-220 Type

Manufacturer: Toshiba

Image and Pinouts:

2SK2662 datasheet

Description

The 2SK2662 is a 500V N-channel enhancement-mode MOSFET designed for high-voltage switching applications, typically housed in a TO-220 package. It features low on-resistance, high forward transfer admittance, and low leakage current, enabling efficient power handling and fast switching performance. This device is widely used in DC-DC converters, motor drives, and relay control circuits.

Features

  • Low drain-source on-resistance with RDS(on)=1.35Ω (typ.)
  • High forward transfer admittance |Yfs|=4.0S (typ.)
  • Low leakage current with IDSS=100µA (max)
  • High voltage capability up to 500V
  • Enhancement mode operation with Vth=2.0–4.0V
  • Suitable for high-efficiency switching applications

Absolute Maximum Ratings (Tc = 25 °C)

Parameter Symbol Value Unit
Drain-Source Voltage VDSS 500 V
Gate-Source Voltage VGSS ±30 V
Drain Current ID 5 A
Power Dissipation Pd 35 W
Channel Temperature Tch 150 °C
Storage Temperature Tstg -55 to 150 °C

Design Notes

  • Ensure gate drive voltage exceeds threshold sufficiently for full enhancement
  • Use proper gate resistor to control switching speed and reduce ringing
  • Heat sinking is necessary for high power dissipation conditions
  • Consider snubber or clamp circuits for inductive load switching
  • Pay attention to SOA limits during switching transitions

Typical Circuit Usage

  • Primary switching element in DC-DC converters
  • Motor drive switching circuits
  • Relay and solenoid drivers
  • High-voltage switching regulators
  • Power control stages in industrial electronics

How to Choose This Part

  • Select for high-voltage applications up to 500V
  • Suitable when moderate current (≤5A) is required
  • Ensure RDS(on) meets efficiency requirements
  • Verify gate drive compatibility with control circuitry
  • Consider thermal design for continuous operation

Applications

  • DC-DC converters
  • Relay drive circuits
  • Motor drive systems
  • Switch-mode power supplies
  • Industrial power control

Alternative / Equivalent Products

  • 2SK2545 (similar high-voltage MOSFET)
  • IRF840 (widely used 500V MOSFET)
  • STP5NK50Z (STMicroelectronics equivalent)
  • FQP5N50 (ON Semiconductor alternative)
  • 2SK1118 (comparable N-channel MOSFET)

2SK2662 Datasheet PDF Download


2SK2662 pdf

Other data sheets are available within the file: K2662

K4145 Datasheet – 60V, N-Ch, Power MOSFET – NEC

This is one of the types of MOSFETs and is a kind of transistor.

Part Number: 2SK4145, 2SK4145-S19-AY

Function: Switching N-Channel Power MOSFET

Package: TO-220 Type

Manufacturer: NEC

Image

K4145 mosfet nec

Description

This is 60V, 84A, N-Channel Power MOSFET. The K4145 is a high-current N-channel power MOSFET optimized for low-loss switching applications. It is particularly suitable for power conversion systems, motor control, and high-efficiency switching designs due to its low RDS(on) and high current capability.

Features

1. Low on-state resistance : RDS(on)= 10 mΩMAX. (VGS= 10 V, ID= 42 A)

2. Low input capacitance : Ciss= 5300 pF TYP.

3. N-channel enhancement-mode MOSFET

4. High drain current capability (up to 84A)

Pinout

K4145 datasheet pinout

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to Source Voltage (VGS= 0 V) : VDSS = 60 V

2. Gate to Source Voltage (VDS= 0 V) : VGSS = ±20 V

3. Drain Current (DC) (TC= 25°C) : ID(DC) = ±84 A

4. Total Power Dissipation (TC= 25°C) : PT1 = 84 W

5. Total Power Dissipation (TA= 25°C) : PT2: = 1.5 W

6. Channel Temperature : Tch = 150 °C

7. Storage Temperature : Tstg = −55 to +150 °C

8. Single Avalanche Current  : IAS= 32 A

9. Single Avalanche Energy : EAS = 102 mJ

Typical Applications

  • Switch Mode Power Supplies (SMPS)
  • DC-DC converters
  • Motor drivers
  • Battery-powered systems
  • Load switching (high current)
  • Automotive electronics

Alternative / Equivalent Devices

  • IRLZ44N (logic-level alternative, lower current)
  • IRF3205 (55V, high current MOSFET)
  • AOI518 / AOZ series (modern low RDS(on) MOSFETs)
  • FDB7030BL (low resistance, high efficiency)

K4145 Datasheet