2SC5178R-T1 Transistor – 3V, 10mA, NPN ( Datasheet PDF )

Part Number: 2SC5178R-T1

Marking : 84T

Function: NPN EPITAXIAL SILICON TRANSISTOR

Package: 4-PIN MINI-MOLD Type

Manufacturer: NEC (Renesas Technology)

Image and Pinouts:

2SC5178R-T1 datasheet

 

Description

This is 3V, 10mA, NPN Silicon Transistor.

Features

1. Low current consumption and high gain

2. 4-pin Mini-Mold package

3. SOT-143 style (Pins for overseas use are assigned to the 2SC5178.)

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 5 V
2. Collector to Emitter Voltage: Vceo = 3 V
3. Emitter to Base Voltage: Vebo = 2 V
4. Collector Current: Ic = 10 mA
5. Total Power Dissipation : Pt = 30 mW
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -65 ~ +150°C

 

 

2SC5178R-T1 Datasheet PDF Download


2SC5178R-T1 pdf

Other data sheets are available within the file:

2SC5178, 2SC5178R, C5178R-T1, C5178R-T2

2SC1735 Datasheet – 100V, 500mA, NPN Transistor

Part Number: 2SC1735, C1735

Function: 100V, 500mA, NPN Transistor

Package: TO-92 Type

Manufacturer: Mitsubishi

Images

2SC1735 NPN Transistor

Description

1. Maximum Collector Power Dissipation (Pc): 0.8 W

2. Maximum Collector-Base Voltage |Vcb|: 100 V

3. Maximum Collector-Emitter Voltage |Vce|: 100 V

4. Maximum Emitter-Base Voltage |Veb|: 5 V

5. Maximum Collector Current |Ic max|: 0.5 A

6. Max. Operating Junction Temperature (Tj): 175 °C

7. Transition Frequency (ft): 65 MHz

8. Collector Capacitance (Cc): 14 pF

9. Forward Current Transfer Ratio (hFE), MIN: 130

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Pinout

2SC1735 datasheet pinout

2SC1735 Datasheet


 

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