Transistor

Toshiba TK5A50D Datasheet PDF – Vdss=500V

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Part Number: TK5A50D

Function: 500V, Silicon N-Channel MOSFET

Package: SC-67, 2-10U1B, TO-220 type

Manufacturer: Toshiba

Image

TK5A50D datasheet

Pinouts: 1. Gate  2. Drain  3. Source

Description

TK5A50D is Silicon N Channel MOS Type Field Effect Transistor.

Features

• Low drain-source ON-resistance: RDS (ON) = 1.3 Ω (typ.)

• High forward transfer admittance: ⎪Yfs⎪ = 3.0 S (typ.)

• Low leakage current: IDSS = 10 μA (max) (VDS = 500 V)

• Enhancement mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 500 V
2. Gate to source voltage: VGSS = ± 30 V
3. Drain current: ID = 5 A
4. Drain Power Dissipation: Pd = 35 W (Tc = 25°C)
5. Channel temperature: Tch = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. Switching Regulator

 

Other data sheets are available within the file: 5A50D

TK5A50D Datasheet PDF Download


TK5A50D pdf

 

2SC2545 Transistor – 60V, 0.1A, NPN ( Datasheet PDF )

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Part Number: 2SC2545

Function: 60V, 100mA, NPN Transistor

Package: TO-92 Type

Manufacturer: Renesas Electronics

Image and Pinouts:

2SC2545 datasheet

 

Description

This is 60V, Silicon NPN Epitaxial Transistor.

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 60 V

2. Collector to Emitter Voltage: Vceo = 60 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 100 mA

5. Collector Dissipation : Pc = 400 mW

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

Applications:

1. Low frequency low noise amplifier

 

2SC2545 Datasheet PDF Download


2SC2545 pdf

Other data sheets are available within the file: 2SC2546, 2SC2547, C2545, C2546