Transistor

MS1307 Datasheet – 100V, 14A, 88W, N-Ch, MOSFET, TO-220

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Part Number: MS1307

Manufacturer: International Rectifier

Function: MOS power N-Channel FET, 100V, 14A, 88W

Package: TO-220 type

Image:

MS1307 Datasheet

MS1307 Datasheet

MS1307 = IRF530 = BUZ20

 

IRF530 Datasheet

International Rectifier : IRF530.PDF

Vishay : IRF530.PDF

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

Features

• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC

C4278 Datasheet – 150V, 10A, NPN Transistor ( PDF )

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Part Number: C4278, 2SC4278

Function: 150V, 10A, NPN Transistor

Package: TO-247 Type

Manufacturer: Rohm, SavantIC

Images:

C4278 transistor

Description

This is Silicon NPN Power Transistor.

Features

1. With TO-247 package
2. Complement to type 2SA1633
3. High current and high power capability

[…]

Absolute maximum ratings (Tc=25′)

1. Collector-base voltage Open emitter : VCBO = 150 V
2. Collector-emitter voltage Open base : VCEO = 150 V
3. Emitter-base voltage Open collector ; VEBO = 6 V
4. Collector current (DC) : IC = 10 A
5. Total power dissipation (TC=25’C) : PD = 100 W

Pinout

C4278 datasheet pinout

Applications

1. For audio output applications

C4278 Datasheet


 

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