Transistor

2SK1954 Datasheet – 180V, 4A, N-Channel MOSFET – NEC

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Part Number: 2SK1954

Function: Switching N-channel Power MOSFET

Package: TO-251, TO-252 Pin type

Manufacturer: NEC, Renesas

Image:

components

Description

The 2SK1954 is N-channel MOS Field Effect Transistor designed for high voltage switching applications.

Pinout

components

Features

1. Low On-state Resistance
RDS(on) = 0.65 Ω MAX. (VGS = 10 V, ID = 2.0 A)

2. Low Ciss: Ciss = 300 pF TYP.

3. Built-in G-S Gate Protection Diode

4. High Avalanche Capability Ratings

Circuit

components

Absoulte maximum ratings ( Ta =25’C )

1. Drain to Source Voltage : VDSS = 180 V
2. Gate to Source Voltage : VGSS = ± 20 V
3. Drain Current (DC) : Id (DC) = ± 4.0 A
4. Channel Temperature : Tch = 150 ‘C

2SK1954 Datasheet PDF


 

Other data sheets are available within the file: K1954, 2SK1954Z, K1954-Z

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K13A65U Datasheet – 650V, N Channel MOSFET ( PDF )

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Part Number: K13A65U, TK13A65U

Function: 650V, N Channel MOSFET

Package: TO 220, SC-67 type

Manufacturer: Toshiba Semiconductor

Images:

K13A65U MOSFET

Description

This is 650V, 13A, N-Channel MOSFET.

Features

1. Low drain-source ON resistance: RDS (ON) = 0.32 Ω (typ.)
2. High forward transfer admittance: ⎪Yfs⎪ = 8.0 S (typ.)
3. Low leakage current: IDSS = 100 μA (max) (VDS = 650 V)
4. Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)

Pinout

K13A65U datasheet pinout

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain-source voltage: VDSS = 650 V
2. Gate-source voltage: VGSS = ±30 V
3. Drain power dissipation (Tc = 25°C): PD = 40 W
4. Single pulse avalanche energy : EAS 86 mJ
5. Avalanche current : IAR = 13 A
6. Repetitive avalanche energy : EAR = 4.0 mJ

Applications:

1. Switching Regulator

 

K13A65U Datasheet


 

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