G4PC40W Datasheet – IRG4PC40W, 600V, 40A, IGBT ( PDF )

This is one of the transistor types. The IGBT is insulated-gate bipolar transistor.

Part Number: G4PC40W

Function: 600V, 40A, INSULATED GATE BIPOLAR TRANSISTOR

Package: TO-247AC Type

Manufacturer: International Rectifier, ( https://www.infineon.com/ )

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G4PC40W IGBT IRG4PC40W

Description

This is 600V, 40A, IGBT ( INSULATED GATE BIPOLAR TRANSISTOR ).

Benefits :

1. Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz (“hard switched” mode)

2. Of particular benefit to single-ended converters and boost PFC topologies 150W and higher

3. Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >>300 kHz)

G4PC40W Pinout

G4PC40W datasheet

 

Features

1. Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications

2. Industry-benchmark switching losses improve efficiency of all power supply topologies

3. 50% reduction of Eoff parameter

4. Low IGBT conduction losses

5. Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability

Other data sheets are available within the file: IRG4PC40W

G4PC40W Datasheet PDF Download

G4PC40W pdf

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S9013 Datasheet – 25V, NPN Transistor

Part Number: S9013 ( = SS9013 )

Function: NPN Silicon Transistor

Package: TO-92 Type

Manufacturer: MCC

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S9013 NPN Transistor

Description

This is 25V, NPN Transistor. S9013 transistor is a type of bipolar junction transistor (BJT) made from silicon, a semiconductor material. This transistor is designed for amplifying or switching electronic signals in various electronic circuits.

Features

1. General purpose application.

2. Switching application

Electrical Characteristics

1. Collector-Base Breakdown Voltage : V(BR)CBO : 40 Vdc

2. Collector-Emitter Breakdown Voltage : V(BR)CEO : 25 Vdc

3. Emitter-Base Breakdown Voltage : V(BR)EBO : 5.0 Vdc

Pinouts:

S9013 datasheet pinout

Features

1. Capable of 0.625Watts(Tamb=25’C) of Power Dissipation.

2. Collector-current : 0.5A

3. Collector-base Voltage : 40V

4. Operating and storage junction temperature range : -55’C to +150’C

Applications

1. High Collector Current.

 

S9013 Datasheet PDF Download

S9013 pdf


 

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