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Part Number: BUT11AF

Function : Silicon Diffused Power Transistor

Package: SOT186 Type

Manufacturer: Philips Semiconductors

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Description

High-voltage, high-speed glass-passivated npn power transistor in a SOT186 envelope with electrically insulated mounting base,intended for use in converters, inverters, switching regulators, motor control systems, etc.

Pinout

Quick Reference Data

1. Collector-emitter voltage peak value (VBE = 0 V) : VCESM = 1000 V

2. Collector-emitter voltage (open base) : VCEO = 450 V

3. Collector current (DC) : IC = 5 A

4. Collector current peak value : ICM = 10 A

5. Total power dissipation (Ths < 25 °C) : Ptot = 20 W

6. Collector-emitter saturation voltage : VCEsat = 1.5 V

BUT11AF Datasheet

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Part Number: BUT11A

Function : HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

Package: TO-220 Type

Manufacturer: STMicroelectronics

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Description

The BUT11A is a silicon Multiepitaxial Mesa NPN transistor in Jedec TO-220 plastic package, particularly intended for switching application.

Absolute Maximum Ratings

1. Collector-Emitter Voltage (VBE = 0 V) : VCES = 1000 V
2. Collector-Emitter Voltage (IB = 0) : VCEO = 450 V
3. Emitter-Base Voltage (IC = 0) : VEBO = 9 V
4. Collector Current : IC = 5 A
5. Collector Peak Current (tp < 5 ms) : ICM = 10 A
6. Base Current : IB = 2 A

Pinout

Features

1. STMicroelectronics PREFERRED SALESTYPE
2. NPN TRANSISTOR
3. HIGH VOLTAGE CAPABILITY
4. FAST SWITCHING SPEED

Applications:
1. FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS

Transistor

BUT11AF Datasheet – Vceo=450V, NPN Transistor – Philips

BUT11AF Datasheet

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BUT11A Datasheet – High Voltage NPN Transistor – ST

BUT11A Datasheet

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