30F122 Datasheet – GT30F122 – 300V, 120A IGBT – Toshiba

Part Number: 30F122, GT30F122

Function: IGBT / Insulated Gate Bipolar Transistor Silicon N-Channel

Package: TO-220SIS Type

Manufacturer: Toshiba

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30F122 image

Description

30F122 Datasheet

GT30F122 Pinout

The Toshiba discrete IGBTs are available in high-voltage and high-current ratings. They are used in inverter and power conversion circuits for such diverse applications as motor drivers, uninterruptible power supply (UPS) systems, IH cookers, plasma display panels (PDPs), strobe flashes and so on.

(1) IGBTs also featuring fast switching

(2) Low collector-emitter saturation voltage even in the large current area

(3) IGBTs featuring a built-in diode with optimal characteristics tailored to specific applications

(4) High input impedance allows voltage drives

(5) Available in a variety of packages

30F122 Datasheet
30F122 pdf

Other data sheets are available within the file: GT30F122

SCH1433 Datasheet PDF – 20V, 3.5A, N-Ch, Power MOSFET

Part Number: SCH1433

Function: N-Channel Power MOSFET, 20V, 3.5A 64mOhm, Single SCH6

Package: SOP 6 Pin Type

Manufacturer: ON Semiconductor

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SCH1433 datasheet

Description

This low-profile high-power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and ultra low on resistance. The device is suitable for applications with low gate charge driving or ultra low on resistance requirements.

Pinouts:

SCH1433 datasheet

Absolute Maximum Ratings ( Ta=25°C )

1. Drain to source voltage : Vdss = 20 V
2. Gate to source voltage : Vgss = ± 10 V
3. Drain Current (DC) : Id = 3.5 A
4. Drain Current (Pulse) : Idp = 14 A
5. Allowable Power Dissipation: Pd = 0.8 W

Features

1. Low On-resistance
2. Low capacitance
3. 1.8V drive
4. Halogen free comliance
5. Protection Diode in, SOT-563 type, 5000pcs/reel

Other data sheets are available within the file: SCH1433-TL-H

 

SCH1433 Datasheet PDF Download


SCH1433 pdf

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