Transistor archives - Page 1170 of 2673

Part Number: C3202, KTC3202, 2SC3202 Datasheet

Description

EPITAXIAL PLANAR NPN TRANSISTOR

Manufacturer: Korea Electronics

Image

Applications

1. General Purpose

2. Switching Application

Features

1. Excellent hFE Linearity : hFE(2)=25(Min.) at VCE=6V, IC=400mA.

2. Complementary to KTA1270.
Pinout

Maximum Ration ( Ta=25’C)

1. Collector-Base Voltage : VCBO = 35 V

2. Collector-Emitter Voltage :VCEO = 30 V

3. Emitter-Base Voltage : VEBO = 5 V

4. Collector Current : IC = 500 mA

5. Base Current : IE = -500 mA

6. Collector Power Dissipation : PC = 625 mW

Part Number: APM2518NU, APM2518N

Function: N-Channel Enhancement Mode MOSFET

Package: TO-252-3 Type

Manufacturer: Sinopower Semiconductor ( www.sinopowersemi.com )

Image

Features

1. 25V/50A,
(1) RDS(ON)=8mW (Typ.) @VGS=10V
(2) RDS(ON)=15mW (T yp.) @VGS=4.5V

2. Reliable and Rugged

3. Avalanche Rated

4. Lead Free and Green Devices Available (RoHS Compliant)

Application

1. Power Management in DesktopComputer or DC/DC Converters.

Pinout

Absolute maximum ratings (Ta=25°C)

1. Drain-Source Voltage : Vdss = 25V

2. Gate-Source Voltage : Vgss = +- 25V

3. Diode Continuous Fowward Current = 30A

Ordering Information