Transistor

RJP30H1 Datasheet PDF – 360V, 30A, N-Ch, IGBT – Renesas

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Part Number: RJP30H1, RJP30H1DPD-00-J2

Function: 360V, 30A, N-Channel Power MOSFET

Package: TO-263 Type

Manufacturer: Renesas Electronics

Image

rjp30h1-mosfet

 

Description

This is 360V, 30A, Silicon N Channel IGBT.

 

Features

1. Trench gate and thin wafer technology (G6H-II series)

2. High speed switching: tr = 80 ns typ., tf = 150 ns typ.

3. Low collector to emitter saturation voltage: VCE(sat)= 1.5 V typ.

4. Low leak current: ICES= 1 µA max.

 

Pinouts:

RJP30H1DPD datasheet

 

Absolute Maximum Ratings

1. Collector to emitter voltage : VCES = 360 V

2. Gate to emitter voltage : VGES = ±30 V

3. Collector current : IC = 30 A

4. Collector dissipation : Pc = 40 W

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

RJP30H1DPD Datasheet

RJP30H1 Datasheet

RJP30H1DPD pdf


 

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5N52U Datasheet – N-Ch 525V, 1.28Ohm Power MOSFET – ST

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Part Number: 5N52U, STD5N52U

Function: N-channel 525 V, 1.28 Ω, 4.4 A, UltraFASTmesh™ Power MOSFET

Package: DPAK, TO-220FP, I2PAK  Type

Manufacturer: STMicroelectronics

Image

5N52U mosfet

Features

1. 100% avalanche tested

2. Outstanding dv/dt capability

3. Gate charge minimized

4. Very low intrinsic capacitances

5. Very low RDS(on)

6. Extremely low trr

Pinouts:
5N52U datasheet

Description

These devices are N-channel Power MOSFETs developed using UltraFASTmesh™ technology, which combines the advantages of reduced onresistance, Zener gate protection and very high dv/dt capability with an enhanced fast body-drain recovery diode.

 

components

5N52U Datasheet


 

STD5N52U pdf

Other data sheets are available within the file: STD5N52U, STF5N52U, STI5N52U