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Description

1. High Voltage and High Reliability
2. High Speed Switching
3. Wide SOA

Pinouts for C5027

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 1100 V
2. Collector to Emitter Voltage: Vceo = 800 V
3. Emitter to Base Voltage: Vebo = 7 V
4. Collector Current: Ic = 3 A
5. Total Dissipation : Pc = 50 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C

Other data sheets are available within the file: KSC5027

Part Number: STP10NK80ZFP, Marking : P10NK80ZFP

Function : N-Channel 800V, 8A, Zener-Protected Supermesh Power MOSFET

Package: TO-220FP Type

Manufacturer: STMicroelectronics

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General Description

The SuperMESH series is obtained through an extreme optimization of ST’s well established strip based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh products.

Pinout

Applications

1. HIGH CURRENT, HIGH SPEED SWITCHING

2. SWITCH MODE POWER SUPPLIES

3. DC-AC CONVERTERS FOR WELDING, UPS AND MOTOR DRIVE

Product Summary

1. TYPICAL RDS(on) = 0.78Ω

2. EXTREMELY HIGH dv/dt CAPABILITY

3. 100% AVALANCHE TESTED

4. GATE CHARGE MINIMIZED

5. VERY LOW INTRINSIC CAPACITANCES

6. VERY GOOD MANUFACTURING REPEATIBILITY

Transistor

C5027 Datasheet – 800V, 3A, NPN Transistor – Fairchild

Description

C5027 Datasheet PDF Download

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P10NK80ZFP Datasheet – 800V, 9A, 40W, N-ch MOSFET – ST

P10NK80ZFP Datasheet

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