Transistor archives - Page 130 of 2673

Description

The C4381 is Silicon NPN Triple Diffused Planar Transistor. (Complement to type 2SA1667/1668)

An NPN Epitaxial Planar Silicon Transistor is a specific type of transistor that belongs to the NPN configuration and is fabricated using an epitaxial planar process with silicon as the semiconductor material.

This transistor is commonly used in electronic circuits for various applications such as amplification, switching, and signal processing.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 150 V
2. Collector to Emitter Voltage: Vceo = 150 V
3. Emitter to Base Voltage: Vebo = 6 V
4. Collector Current: Ic = 2 A
5. Collector Dissipation: Pc = 25 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C

Application:

1. TV Vertical Output, Audio Output Driver and General Purpose

[…]

This post explains for the IGBT.

The Full Part Number is K30T60, IKW30N60T.

The package is PG-TO247-3 type.

The function of this semiconductor is 600V, 30A, IGBT.

The manufacturers of this product is Infineon Technologies.

See the preview image and the PDF file for more information.

Preview images :

K30T60 pinout datasheet

Description

The K30T60 is 600V, 30A, IGBT. IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).

They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.

Features:

1. Very low VCE(sat) 1.5V (typ.)

2. Maximum Junction Temperature 175°C

3. Short circuit withstand time 5us

4. Designed for :
– Frequency Converters
– Uninterruptible Power Supply

5. TRENCHSTOP and Fieldstop technology for 600V applications offers :
– very tight parameter distribution
– high ruggedness, temperature stable behavior
– very high switching speed
– low VCE(sat)

6. Positive temperature coefficient in VCE(sat)

7. Low EMI

8. Low Gate Charge

9. Very soft, fast recovery anti-parallel Emitter Controlled HE diode

10. Qualified according to JEDEC1 for target applications

11. Pb-free lead plating; RoHS compliant

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter Voltage: Vces = 600 V

2. Gate to emitter Voltage: Vges = ± 20 V

3. Collector Current: Ic = 45 A

4. Power Dissipation: Pc = 187 W

5. Operating junction temperature: Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

[…]

K30T60 pdf igbt

Transistor

C4381 PDF – 150V, 2A, NPN Transistor – 2SC4381

Description

C4381 PDF Datasheet

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K30T60 PDF – 600V, 30A, IGBT – IKW30N60T – Infineon

Description

K30T60 PDF Datasheet

Related articles across the web