This post explains for the IGBT.
The Full Part Number is K30T60, IKW30N60T.
The package is PG-TO247-3 type.
The function of this semiconductor is 600V, 30A, IGBT.
The manufacturers of this product is Infineon Technologies.
See the preview image and the PDF file for more information.
Preview images :
Description
The K30T60 is 600V, 30A, IGBT. IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).
They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.
An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.
Features:
1. Very low VCE(sat) 1.5V (typ.)
2. Maximum Junction Temperature 175°C
3. Short circuit withstand time 5us
4. Designed for :
– Frequency Converters
– Uninterruptible Power Supply
5. TRENCHSTOP and Fieldstop technology for 600V applications offers :
– very tight parameter distribution
– high ruggedness, temperature stable behavior
– very high switching speed
– low VCE(sat)
6. Positive temperature coefficient in VCE(sat)
7. Low EMI
8. Low Gate Charge
9. Very soft, fast recovery anti-parallel Emitter Controlled HE diode
10. Qualified according to JEDEC1 for target applications
11. Pb-free lead plating; RoHS compliant
Absolute Maximum Ratings (Ta = 25°C)
1. Collector to emitter Voltage: Vces = 600 V
2. Gate to emitter Voltage: Vges = ± 20 V
3. Collector Current: Ic = 45 A
4. Power Dissipation: Pc = 187 W
5. Operating junction temperature: Tj = 150 °C
6. Storage temperature: Tstg = -55 to +150 °C
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K30T60 PDF Datasheet
