What is 2N3055? – 15A, 60V, NPN Bipolar Power Transistor

What is 2N3055?

It has a maximum collector current rating of 15 amperes and a maximum collector-emitter voltage rating of 60 volts. It is designed for use in medium-power linear and switching applications, and has a low collector-emitter saturation voltage and a high current gain.

Part Number: 2N3055

Function: 15A, 60V, 115W, NPN Silicon Power Transistor

Package: TO−204AA (TO−3) Type

Manufacturer: ON Semiconductor

Image

2N3055 Transistor

Description

The 2N3055 is widely used in audio power amplifiers, where it is often paired with a complementary PNP transistor such as the MJ2955. It is also used in power supplies, voltage regulators, and other applications where high current and voltage ratings are required.

Complementary silicon power transistors are designed for general−purpose switching and amplifier applications.

Advantages Vs Disadvantages

Advantages:

1. High current rating of 15 amperes allows it to handle high-power applications

2. High current gain allows for efficient power amplification

3. Low collector-emitter saturation voltage reduces power dissipation

4. Wide availability and low cost

5. Robust and reliable design

 

Disadvantages:

1. Limited maximum voltage rating of 60 volts

2. Low switching speed limits its use in high-frequency applications

3. Requires a heatsink to dissipate heat generated during operation

4. Large physical size compared to newer power transistors

 

Pinouts
2N3055 Pinout Image

 

Features

1. DC Current Gain − hFE= 20 -70 @ IC= 4 Adc

2. Collector−Emitter Saturation Voltage : VCE(sat)= 1.1 Vdc (Max) @ IC= 4 Adc

3. Excellent Safe Operating Area

4. Pb−Free Package is Available

2N3055 Datasheet Transistor

Absolute Maximum Ratings (Ta = 25°C)

1. Collector-Emitter Voltage : VCEO = 60 Vdc

2. Collector-Emitter Voltage : VCER = 70 Vdc

3. Collector-Base Voltage : VCB = 100 Vdc

4. Emitter-Base Voltage : VEB = 7 Vdc

5. Collector Current-Continuous : IC = 15 Adc

6. Base Current : IB = 7 Adc

7. Total Power Dissipation @ TC = 25°C : PD = 115 W

Reference Site: https://en.wikipedia.org/wiki/2N3055

Similar Part Number

1. MJ2955: Complementary PNP transistor

2. TIP3055: Similar NPN power transistor with higher maximum voltage rating

3. MJE3055: Higher current rating and higher maximum voltage rating than this transistor

2N3055 Datasheet PDF

2N3055 pdf


Other data sheets are available within the file: 2N3055G, 2N3055H, MJ2955 ( PNP )

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H20R1202 IGBT – 1200V, 20A, IHW20N120R2 ( TO-247 )

Part Number: IHW20N120R2, H20R1202

Function: 1200V, 20A, Reverse Conducting IGBT

Package: TO-247 type

Manufacturer: Infineon Technologies

Image and Pinouts:
H20R1202 pdf igbt

Description

H20R1202 is 1200V, 20A. Reverse Conducting IGBT with monolithic body diode.

IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).

They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.

When the gate voltage is removed, the channel is turned off, and the IGBT becomes an open switch.

These advantages include high voltage and current handling capability, fast switching speed, low switching losses, and low on-state resistance.

 

Features

1. Powerful monolithic Body Diode with very low forward voltage

2. Body diode clamps negative voltages

3. Trench and Fieldstop technology for 1200 V applications offers :

(1) Very tight parameter distribution

(2) High ruggedness, temperature stable behavior

4. NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat)

5. Low EMI

6. Qualified according to JEDEC for target applications

7. Pb-free lead plating; RoHS compliant

H20R1202 datasheet

Applications:

1. Inductive Cooking

2. Soft Switching Applications

H20R1202 PDF Datasheet