Transistor

K8A60DA Datasheet – 600V, Nch MOSFET – Toshiba

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This is one of the types of MOSFETs and is a kind of transistor.

Part Number: K8A60DA

Function: 600V, 7.5A, Silicon N Channel MOSFET Type

Package: TO-220 Type

Manufacturer: Toshiba

Image :
K8A60DA image

( Marking Number : TK8A60DA -> K8A60DA  )

Description

This is Silicon N Channel MOS Type Field Effect Transistor(Metal Oxide Semiconductor Field Effect Transistor).  K8A60DA transistor is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

Features

1.  Low drain-source ON resistance: RDS (ON)= 0.8 Ω(typ.)

2.  High forward transfer admittance: ⎪Yfs⎪= 4.0 S (typ.)

3.  Low leakage current: IDSS= 10 μA (max) (VDS= 600 V)

4.  Enhancement-mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

Pinout

K8A60DA datasheet pinout

Applications:

1. Switching Regulator

K8A60DA Datasheet PDF


 

Other data sheets are available within the file: TK8A60DA, TK8A600A

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D13009K Datasheet PDF – 400V, 12A, NPN Power Transistor

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This is one of the transistor types. A Silicon NPN Transistor is a type of bipolar junction transistor (BJT) made from silicon, a semiconductor material. This transistor is designed for amplifying or switching electronic signals in various electronic circuits.

Part Number: D13009K, 3DD13009K

Function: NPN bipolar power transistor ( 12A, 400V )

Package: TO-220C, TO-3PB

Manufacturer: Jilin Sino Microelectronics ( http://www.hwdz.com.cn/ )

Image and Pinouts:

D13009K datasheet

Description

D13009K is a high voltage fast switching power transistor that falls under the category of NPN transistors. The collector current of this device is 12A which projects it can endure load under 12A. This chip is mainly used in amplification and switching applications

Features

1. High pressure

2. High current capacity

3. High switching speed

4. High reliability

5. High-frequency switching power supply

6. Ultrasonic Generator

7. High-frequency power conversion

8. General power amplifier circuit

Applications

1. Energy-saving light

2. Electronic ballasts

3. High frequency switching power supply

4. High frequency power transform

5. Commonly power amplifier

Marking Information

D13009K Main Characteristics

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 700 V

2. Collector to Emitter Voltage: Vceo = 400 V

3. Emitter to Base Voltage: Vebo = 9 V

4. Collector Current: Ic = 12 A

5. Collector Dissipation: Pc = 100 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

Other data sheets are available within the file: 3DD13009K-O-C-N-B, 3DD13009K-O-AB-N-B

D13009K Datasheet PDF Download


 

D13009K pdf

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