Transistor

F3NK80Z PDF Datasheet – 800V, 2.5A, N-ch, MOSFET, Transistor

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Part Number: F3NK80Z, STF3NK80Z

Function: N-channel 800V – 3.8Ω – 2.5A Power MOSFET

Package: TO-220FP type

Manufacturer: STMicroelectronics

Image:

F3NK80Z pdf datasheet

Description

This is 800V, 2.5A, N-channel MOSFET. 

The SuperMESH, F3NK80Z series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh products.

F3NK80Z pdf pinout

 

Features

1. Extremely high dv/dt capability

2. 100% avalanche tested

3. Gate charge minimized

4. Very low intrinsic capacitances

5. Very good manufacturing repeatibility

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 800 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 2.5 A

4. Power Dissipation : Ptot = 25 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. Switching application

 

F3NK80Z PDF Datasheet

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18N50 PDF – Vdss=500V, N-Channel MOSFET Transistor

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This post describes for the MOSFET 18N50.

The function of this transistor is N-Channel MOSFET.

The package is TO-220F type.

The Pinouts: 1. Gate  2. Drain  3. Source

The manufacturer of this part is Inchange Semiconductor.

See the preview image and the Datasheet PDF file for more information.

18N50 pinout datasheet

Description

18N50 is 500V, 18A, N-Channel MOSFET Transistor.

A 500V, 18A N-channel MOSFET refers to a specific type of metal-oxide-semiconductor field-effect transistor (MOSFET) that operates as an N-channel device and is capable of handling high voltage and current levels.

Key specifications:

1. Voltage Rating: The MOSFET can handle a maximum voltage of 500 volts. This rating determines the maximum voltage that can be applied across the drain and source terminals of the transistor.

2. Current Rating: The MOSFET is capable of carrying a maximum current of 18 amperes. This rating defines the maximum continuous current that can flow through the drain and source terminals.

Features:

1. Drain Current ID= 18A@ TC=25℃

2. Drain Source Voltage : VDSS= 500V(Min)

3. Static Drain-Source On-Resistance

4. RDS(on) = 0.32Ω(Max)

5. Fast Switching

 

18N50 pdf transistor

N-channel MOSFETs are widely used in various applications such as power supplies, motor control, lighting systems, and high-power switching applications. They offer advantages such as low on-resistance, high efficiency, and fast switching speed.

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source Voltage: VDSS = 500 V

2. Gate to source Voltage: VGSS = ± 20 V

3. Drain current: ID = 18 A

4. Total Dissipation: Pd = 38.5 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Applications:

1. Switch regulators

2. Switching converters, motor drivers, relay drivers

18N50 PDF Datasheet


 

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