F3NK80Z PDF Datasheet – 800V, 2.5A, N-ch, MOSFET, Transistor

Part Number: F3NK80Z, STF3NK80Z

Function: N-channel 800V – 3.8Ω – 2.5A Power MOSFET

Package: TO-220FP type

Manufacturer: STMicroelectronics

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F3NK80Z pdf datasheet

Description

This is 800V, 2.5A, N-channel MOSFET. An N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals.

N-channel MOSFETs are widely used in a variety of electronic applications due to their high input impedance, fast switching speeds, and low power consumption. They are commonly used as switches, amplifiers, and voltage regulators.

The SuperMESH, F3NK80Z series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh products.

F3NK80Z pdf pinout

 

Features

1. Extremely high dv/dt capability

2. 100% avalanche tested

3. Gate charge minimized

4. Very low intrinsic capacitances

5. Very good manufacturing repeatibility

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 800 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 2.5 A

4. Power Dissipation : Ptot = 25 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. Switching application

 

F3NK80Z PDF Datasheet

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