Part Number: K6A650, Correct Part Number: K6A65D, TK6A65D

Function: 650V, N-Channel MOSFET

Package: TO-220 Type

Manufacturer: Toshiba Semiconductor

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Description

The K6A650 is 650V, 6A, N-channel MOSFET.

Features:

1. Low drain-source ON resistance: RDS (ON) = 0.95 Ω (typ.)
2. High forward transfer admittance: ⎪Yfs⎪ = 4.0 S (typ.)
3. Low leakage current: IDSS = 10 μA (max) (VDS = 650 V)
4. Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Applications:

1.Switching Regulator

Pinout:

[…]

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 650 V
2. Gate to source voltage: VGSS =  ± 30 V
3. Drain current: ID =  6 A
4. Drain power dissipation (Tc = 25°C): PD = 45 W
5. Single pulse avalanche energy : Eas = 281 mJ
6. Avalanche current : I ar = 6 A
7. Channel temperature: Tch = 150 °C
8. Storage temperature: Tstg = +150 °C

K6A65D Datasheet

Part Number: KIA50N06

Function: 50A, 60V, N-CHANNEL MOSFET (Transistor)

Package: TO-252, TO-220, TO-220F type

Manufacturer: KIA Semiconductor

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1. Description

KIA 50 Amps, 60 Volts N-CHANNEL MOSFET, The KIA50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching

 

2. Features

(1) RDS(ON)=23mΩ@VGS=10V.
(2) Ultra low gate charge (typical 30nC)
(3) Low reverse transfer capacitance
(4) Fast switching capability
(5) 100％ avalanche energy specified
(6) Improved dv/dt capability

3. Pin configuration Pin 1 2 3 Function Gate Drain Source 1 of 9 Free Datasheet http:/// KIA 50 Amps, 60 Volts N-CHANNEL MOSFET 50N06 SEMICONDUCTORS 6. Absolute maximum ratings Parameter Drain to source voltage Gate to source voltage TJ=25 ºCID50A Continuous drain current TJ=100 ºCID35A Drain current pulsed (note1)IDM200A Single pulsed avalanche energy (note2)EAS480mJ […]

KIA50N06 PDF Datasheet