Transistor

K10A60D PDF – 600V, 10A, MOSFET, TK10A60D ( Datasheet )

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Part Number: K10A60D, TK10A60D

Function: 600V, N-Channel MOSFET, Transistor

Package: TO-220 Type

Manufacturer: Toshiba

Images:

K10A60D transistor

 

Description

K10A60D is 600V, 10A, Silicon N Channel MOS Type Field Effect Transistor. 

 

Features

• Low drain-source ON-resistance: RDS (ON) = 0.62Ω (typ.)

• High forward transfer admittance: |Yfs| = 6.0S (typ.)

• Low leakage current: IDSS = 10 μA (VDS = 600 V)

• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

K10A60D pdf pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 10 A

4. Drain Power Dissipation: Pd = 45 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Applications:

1. Switching Regulator

K10A60D PDF Datasheet

IRC630 PDF Datasheet – Power MOSFET ( 200V / 0.40 ohm / 9.0A )

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This post explains for the MOSFET.

The Part Number is IRC630. The Package is TO-220 Type

The function of this semiconductor is HEXFET Power MOSFET.

The package is TO-220 Type

Manufacturer: International Rectifier

Preview images :

IRC630 datasheet transistor

Description

IRC630 is 200V, 9A, HEXFET Power MOSFET. A HEXFET Power MOSFET is a type of metal-oxide-semiconductor field-effect transistor (MOSFET) designed for power electronics applications. HEXFET is actually a trademarked term used by the company International Rectifier (now part of Infineon Technologies) to refer to their line of power MOSFETs. The term “HEXFET” stands for “Hexagonal Structure Field-Effect Transistor.”

Third Generation HEXFETs from international Rectifier provide the desinger with the best combination of fast switching, reggedized device design, low on-resistance and cost-effeciveness. The HEXSense device provides an accurate fraction of the drain current through the additional two leads to be used of control or protection of the device.

IRC630 pdf pinout

Features:

1. Dynamic dv/dt Rating

2. Repetitive Avalanche Rated

3. Current Sense

4. Fast Switching

5. Ease of Paralleling

6. Simple Drive Requirements

[…]IRC630 datasheet mosfet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 200 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 9 A

4. Total Power Dissipation: Pd =74 W

5. Avalanche energy: Ear = 7.4 mJ

6. Channel temperature: Tch = 150 °C

7. Storage temperature: Tstg = -55 to +150 °C

IRC630 PDF Datasheet