Transistor

A970 Transistor – PNP, 120V, 100mA, 2SA970 ( PDF )

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Part Number: A970, 2SA970

Function: – 120V, – 100mA, PNP Transistor

Package: TO-92 tye

Manufacturer: Toshiba

Images:A970 pdf pinout

Description

The A970 is 120V, 100mA, Silicon PNP Transistor. 

Characteristics:

Features

• Low noise : NF = 3dB (typ.) RG = 100 Ω, VCE = −6 V, IC = −100 μA, f = 1 kHz

• High DC current gain: hFE = 200~700

• High breakdown voltage: VCEO = −120 V

• Low pulse noise. Low 1/f noise

A970 transistor datasheet

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = – 120 V

2. Collector to Emitter Voltage: Vceo = – 120 V

3. Emitter to Base Voltage: Vebo = – 5 V

4. Collector Current: Ic = – 100 mA

5. Collector Dissipation : Pc = 300 mW

6. Junction Temperature: Tj = 125°C

7. Storage Temperature: Tsg = -55 ~ +125°C

Applications:

1. Low Noise Audio Amplifier

A970 PDF Download

5N60C PDF Datasheet – 4.5A, 600V, MOSFET – FQB5N60C

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Part Number: 5N60C, FQB5N60C, FQI5N60C

Function: 600V, 4.5A, MOSFET, Transistor

Package: D2Pak, I2Pak Type

Manufacturer: Fairchild Semiconductor

Images:5N60C pinout pdf

Description

5N60C is 600V, 4.5A, N-Channel MOSFET.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.  […]

5N60C transistor datasheet

Features

1. 4.5A, 600V, RDS(on) = 2.5Ω @VGS = 10 V

2. Low gate charge ( typical 15 nC)

3. Low Crss ( typical 6.5 pF)

4. Fast switching

5. 100% avalanche tested

6. Improved dv/dt capability

5N60C Datasheet

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