2N6027 PDF – 40V, Programmable Unijunction Transistor

A Programmable Unijunction Transistor (PUT) is a type of solid-state electronic device that is used as a switching element in electronic circuits. It is related to the more common Unijunction Transistor (UJT) and shares some similarities but offers programmable characteristics.

Part Number: 2N6027

Function: Programmable Unijunction Transistor

Package: TO-92 Type

Manufacturer: ON Semiconductor

Images:2N6027 pdf transistor

Description

The 2N6027 is Programmable Unijunction Transistor. Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, IV, and IP by merely selecting two resistor values. Application includes thyristor−trigger, oscillator, pulse and timing circuits. These devices may also be used in special thyristor applications due to the availability of an anode gate. Supplied in an inexpensive TO−92 plastic package for high−volume requirements, this package is readily adaptable for use in automatic insertion equipment.

Features

1. Programmable − RBB, IV and IP

2. Low On−State Voltage − 1.5 V Maximum @ IF = 50 mA

3. Low Gate to Anode Leakage Current − 10 nA Maximum

4. High Peak Output Voltage − 11 V Typical

5. Low Offset Voltage − 0.35 V Typical (RG = 10 kΩ)

6. Pb−Free Packages are Available

2N6027 datasheet

2N6027 PDF Datasheet

W11NB80 PDF Datasheet – 800V, 11A, MOSFET, STW11NB80

Part Number: W11NB80, STW11NB80

Function: N-Channel MOSFET, 800V, 11A

Package: TO-247 Type

Manufacturer: STMicroelectronics

Images:W11NB80 pdf pinout

Description

W11NB80 is 800V, 11A, N-Channel Power MOSFET. 

Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an
advanced family of power MOSFETs with outstanding performances. The new patent
pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

Features

1. TYPICAL RDS(on) = 0.65 Ω

2. EXTREMELY HIGH dv/dt CAPABILITY

3. ± 30V GATE TO SOURCE VOLTAGE RATING

4. 100% AVALANCHE TESTED

5. VERY LOW INTRINSIC CAPACITANCES

6. GATE CHARGE MINIMIZED

W11NB80 datasheet mosfet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 800 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 11 A

4. Total Power Dissipation : Ptot = 190 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -65 to +150 °C

W11NB80 PDF Datasheet