Transistor archives - Page 236 of 2673

Description

D863 is NPN Epitaxial Planar Silicon Transistor.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 60 V

2. Collector to Emitter Voltage: Vceo = 50 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 1 A

5. Collector Dissipation : Pc = 0.9 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

Applications:

1. Voltage Regulator

2. Relay Lamp Driver

3. Electrical Equipment

Full Part Number is FMH23N50E.

The Function is N-Channel Power MOSFET

The package is TO-3P(Q) type.

The manufacturer of the product is Fuji Electric.

See the preview image and the PDF file for more information.

Images:

23N50E pdf datasheet

Description

The 23N50E is 500V, 23A, N-Channel Silicon Power MOSFET.

Pinouts:

23N50E pinout

Features

1. Maintains both low power loss and low noise

2. Lower RDS(on) characteristic

3. More controllable switching dv/dt by gate resistance

4. Smaller VGS ringing waveform during switching

5. Narrow band of the gate threshold voltage (3.0±0.5V)

6. High avalanche durability

23N50E mosfet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 500 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 23 A

4. Total Power Dissipation: Pd = 2.5 W

5. Avalanche energy: Ear = 31.5 mJ

6. Channel temperature: Tch = 150 °C

7. Storage temperature: Tstg = -55 to +150 °C

Applications

1. Switching regulators

2. UPS (Uninterruptible Power Supply)

3. DC-DC converters

Transistor

D863 PDF Datasheet – 50V, Transistor, NPN ( 2SD863 )

Description

D863 PDF Datasheet

23N50E PDF – 500V, 23A, Power MOSFET – FMH23N50E

Description

Features

23N50E PDF Datasheet

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