23N50E PDF – 500V, 23A, Power MOSFET – FMH23N50E

Full Part Number is FMH23N50E.

The Function is N-Channel Power MOSFET

The package is TO-3P(Q) type.

The manufacturer of the product is Fuji Electric.

See the preview image and the PDF file for more information.


23N50E pdf datasheet


The 23N50E is 500V, 23A, N-Channel Silicon Power MOSFET. An N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals.

N-channel MOSFETs are widely used in a variety of electronic applications due to their high input impedance, fast switching speeds, and low power consumption. They are commonly used as switches, amplifiers, and voltage regulators.


23N50E pinout



1. Maintains both low power loss and low noise

2. Lower RDS(on) characteristic

3. More controllable switching dv/dt by gate resistance

4. Smaller VGS ringing waveform during switching

5. Narrow band of the gate threshold voltage (3.0±0.5V)

6. High avalanche durability


23N50E mosfet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 500 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 23 A

4. Total Power Dissipation: Pd = 2.5 W

5. Avalanche energy: Ear = 31.5 mJ

6. Channel temperature: Tch = 150 °C

7. Storage temperature: Tstg = -55 to +150 °C


1. Switching regulators

2. UPS (Uninterruptible Power Supply)

3. DC-DC converters

23N50E PDF Datasheet

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