23N50E PDF – 500V, 23A, Power MOSFET – FMH23N50E

Full Part Number is FMH23N50E.

The Function is N-Channel Power MOSFET

The package is TO-3P(Q) type.

The manufacturer of the product is Fuji Electric.

See the preview image and the PDF file for more information.

Images:

23N50E pdf datasheet

Description

The 23N50E is 500V, 23A, N-Channel Silicon Power MOSFET. An N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals.

N-channel MOSFETs are widely used in a variety of electronic applications due to their high input impedance, fast switching speeds, and low power consumption. They are commonly used as switches, amplifiers, and voltage regulators.

Pinouts:

23N50E pinout

 

Features

1. Maintains both low power loss and low noise

2. Lower RDS(on) characteristic

3. More controllable switching dv/dt by gate resistance

4. Smaller VGS ringing waveform during switching

5. Narrow band of the gate threshold voltage (3.0±0.5V)

6. High avalanche durability

 

23N50E mosfet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 500 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 23 A

4. Total Power Dissipation: Pd = 2.5 W

5. Avalanche energy: Ear = 31.5 mJ

6. Channel temperature: Tch = 150 °C

7. Storage temperature: Tstg = -55 to +150 °C

Applications

1. Switching regulators

2. UPS (Uninterruptible Power Supply)

3. DC-DC converters

23N50E PDF Datasheet

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