Transistor

BU3150AF PDF Datasheet – 800V, 3A, NPN Transistor

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Part Number: BU3150AF

Function: 800V, 3A, NPN Power Transistor

Package: TO-220F type

Manufacturer: Shenzhen Jingdao Electronic

Images:BU3150AF pdf pinout

 

Description

BU3150AF is 800V, 3ANPN Power Transistor.

 

Features：

1. High Current capacity speed B.Base C.Collector E.Emitter

2. High switching

3. Wide safe operation area

BU3150AF datasheet transistor

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 1100  V

2. Collector to Emitter Voltage: Vceo = 800 V

3. Emitter to Base Voltage: Vebo = 9 V

4. Collector Current: Ic = 3 A

5. Total Dissipation: Pc = 50 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperatue: Tsg = -55 ~ +150°C

 

Applications：

1. Electronical Ballasts for fluorescent lighting

2. Charger and Switch mode power supplies

BU3150AF PDF Datasheet

BU3150AF pdf

K3919 PDF – 25V, MOSFET, Transistor – 2SK3919

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Part Number: K3919, 2SK3919

Function: 25V, N-Channel Power MOSFET

Package: TO-251, TO-252 type

Manufacturer: NEC

See the preview image and the PDF file for more information.

K3919 pinout datasheet

 

Description

The K3919 is N-channel MOSFET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.

1. Voltage Rating: The MOSFET has a maximum voltage rating of 25V, indicating it can handle a maximum voltage of 25V in its operating conditions without the risk of damage. This voltage rating is important for applications that require voltage levels up to 25V, such as low-voltage power supplies, small motors, LED lighting, and various other electronic systems.

2. Power Handling: The power MOSFET is designed to handle higher power levels compared to small-signal MOSFETs. The power handling capacity of the MOSFET is typically specified by its current rating, on-resistance (RDS(on)), and thermal characteristics.

Features

• Low on-state resistance RDS(on)1 = 5.6 mΩ MAX. (VGS = 10 V, ID = 32 A)

• Low Ciss: Ciss = 2050 pF TYP.

• 5 V drive available (TO-251)

 

K3919 pdf mosfet transistor

N-channel power MOSFETs are widely used in power electronics applications, including power supplies, motor drives, inverters, battery charging systems, and other applications that require efficient switching and control of moderate power levels.

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source Voltage: VDSS = 25 V

2. Gate to source Voltage: VGSS = ± 20 V

3. Drain current: ID = ± 64 A

4. Total Power Dissipation: Pd = 1 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

K3919 PDF Datasheet