H669A PDF Datasheet – 160V, 1.5A, NPN Transistor

Part Number: H669A

Function: 160V, NPN Silicon Transistor

Package: TO-126ML Type

Manufacturer: huashan

Images:H669A pdf datasheet

Description

H669A is 160V, 1.5A NPN SILICON TRANSISTOR. 

1. Current Amplification: NPN transistors are designed to amplify electrical current, and can be used in a wide range of electronic applications such as amplifiers, switches, and oscillators.

2. Forward Biased: In order to operate, the base-emitter junction of an NPN transistor must be forward biased, meaning that the base must be connected to a positive voltage relative to the emitter.

3. High Input Impedance: NPN transistors have a high input impedance, which means that they are less likely to draw current from the input source, and are therefore less likely to cause a drop in voltage across the source.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 180 V

2. Collector to Emitter Voltage: Vceo = 160 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 1.5 A

5. Total Dissipation: Pc = 1W

 

Applications:

1. For low frequency power amplification.

 

H669A PDF Datasheet

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A1023 PDF – 120V, 0.8A, PNP Transistor

Part Number: A1023

Function: -120V, PNP Transistor

Package: TO-92L type

Manufacturer: FGX

Images:

A1023 pdf datasheet transistor

 

Description

A1023 is 120V, 0.8A, PNP Transistor.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = – 120 V

2. Collector to Emitter Voltage: Vceo = – 120 V

3. Emitter to Base Voltage: Vebo = – 5 V

4. Collector Current: Ic = – 800 mA

5. Collector Dissipation : Pc = 1 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

Applications:

1. High Voltage Applications.

A1023 PDF Datasheet