Transistor archives - Page 244 of 2673

Description

D2012 is 50V, 3A, NPN TRANSISTOR.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 60 V

2. Collector to Emitter Voltage: Vceo = 50 V

3. Emitter to Base Voltage: Vebo = 7 V

4. Collector Current: Ic = 3 A

5. Collector Dissipation : Pc = 30 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

Features:

1. Collector-Emitter voltage: BVCBO= 60V

2. Collector current up to 3A

3. High hFE linearity

Part Number: K1118, 2SK1118

Function: 600V, 6A, N-Channel MOSFET

Package: TO-220 Type

Manufacturer: Toshiba

Images: K1118 pinout pdf

Description

K1118 is 600V, 6A, Silicon N-Channel MOS filed effect transistor.

1. Drain Current ID=6A@ TC=25℃

2. Drain Source Voltage- : VDSS= 600V(Min)

3. Fast Switching Speed

4. Minimum Lot-to-Lot variations for robust device performance and reliable operation

K1118 datasheet mosfet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 6 A

4. Drain Power Dissipation: Pd = 6 A

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Applications:

1. Designed for high voltage, high speed power switching applications such as switching regulators

2. Converters, solenoid and relay drivers.