40N03GP PDF Datasheet – 30V, 40A, N-ch, Power MOSFET

Part Number: 40N03GP

Function: 30V, 40A, N-channel MOSFET

Package: TO-220 Type

Manufacturer: Advanced Power Electronics

Images:

1 page
40N03GP pdf datasheet

Description

40N03GP is 30V, 40A, N-Channel Power MOSFET(Metal Oxide Semiconductor Field Effect Transistor). This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 package is widely preferred for all commercial-industrial applications and suited for low voltage applications such as DC/DC converters and high efficiency switching circuits.

 

Features

1.  Low Gate Charge

2. Simple Drive Requirement

3. Fast Switching Characteristic […]

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40N03GP transistor

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 30 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 40 A

4. Total Power Dissipation: Pd = 50 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

40N03GP PDF Datasheet

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TSF8N60M PDF Datasheet – 600V, 7.5A, N-Ch, MOSFET

TSF8N60M is one of the MOSFET types.

This product has 600V, N-Channel MOSFET functions.

The package is TO-220, TO-220F Type.

The manufacturers of this product is Truesemi.

See the preview image and the PDF file for more information.

Images:

1 page
TSF8N60M pdf datasheet

Description

This is 600V, 7.5A, N-Channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor). This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

This Power MOSFET is produced using Truesemi’s advanced planar stripe, DMOS technology. This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics. These devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

TSF8N60M transistor pinout

Features

1. 7.5A,600v,RDS(on)=1.2Ω@VGS=10V

2. Gate charge (Typical 30nC)

3. High ruggedness

4. Fast switching

5. 100% AvalancheTested

6. Improved dv/dt capability

TSF8N60M PDF Datasheet


 

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