K4A60DA PDF Datasheet – 600V, 3.5A, N-Ch, MOSFET

Part Number: K4A60DA, TK4A60DA

Function: 600V, 3.5A, N-Channel, MOSFET, Transistor

Package: TO-220 Type

Manufacturer: Toshiba

Images:

1 page
transistor K4A60DA pdf datasheet

Description

K4A60DA is 600V, 3.5A, Silicon N Channel MOS Type Field Effect Transistor(Metal Oxide Semiconductor Field Effect Transistor). This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

Features

1. Low drain-source ON resistance: RDS (ON) = 1.7 Ω (typ.)

2. High forward transfer admittance: ⎪Yfs⎪ = 2.2 S (typ.)

3. Low leakage current: IDSS = 10 μA (VDS = 600 V)

4. Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA)

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 3.5 A

4. Drain Power Dissipation: Pd = 35 W (Tc = 25°C)

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

3 page
mosfet K4A60DA equivalent

Applications:

1. Switching Regulator

 

K4A60DA PDF Datasheet

Posts related to ‘ MOSFET ‘

Part number Description
K11A60D 600V, 11A, MOSFET – TK11A60D
4407A AO4407A (30V, P-Ch, MOSFET)
2SK2373 2SK2373 MOSFET – 30V, 0.2A, Transistor ( Datasheet PDF )
60T03GP 30V, 45A, MOSFET, Transistor
APM2518NU APM2518NU PDF – 25V, 50A, N-Channel Mode MOSFET
K7A60W 600V, 7A, N-ch, MOSFET, TK7A60W
K1923 MOSFET, 600V, 4A, Transistor, TO-220AB
MOSFET 30V, 50A, SinoPower ( PDF )
IRFP460 500V, 20A, Power MOSFET – IXYS
2SK3061 N-Ch, 60V, 70A, MOSFET

 

J377 PDF Datasheet – 60V, 5A, MOSFET, Transistor, 2SJ377

Part Number: J377, 2SJ377

Function: 60V, 5A, P-Channel MOSFET

Manufacturer: Toshiba Semiconductor

Images:

1 page
J377 pdf pinout

 

Description

J377 is Silicon P-Channel MOS Type Field Effect Transistor (Metal-Oxide-Semiconductor Field-Effect Transistor). This is a type of MOSFET that is constructed using a p-type substrate. MOSFETs are electronic devices that are widely used as switches or amplifiers in electronic circuits.

Features

1. 4 V gate drive

2. Low drain-source ON-resistance : RDS (ON) = 0.16 Ω (typ.)

3. High forward transfer admittance : |Yfs| = 4.0 S (typ.)

4. Low leakage current : IDSS = – 100 μA (max) (VDS = – 60 V)

5. Enhancement mode : Vth = – 0.8 to – 2.0 V (VDS = – 10 V, ID = – 1 mA)

 

3 page
J377 transistor datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = – 60 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = – 5 A

4. Drain Power Dissipation: Pd = 20 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Applications:

1. Relay Drive, DC/DC Converter and Motor Drive

J377 PDF Datasheet