Transistor

P6NK90Z PDF – N-Ch, 900V, 5.8A, MOSFET – STP6NK90Z

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The P6NK90Z is one of the MOSFET types.

The Full Part Number is STP6NK90Z.

The function of this semiconductor is N-CHANNEL 900V, 1.56W, 5.8A, Power MOSFET.

The package is TO-220, D2Pak Type

The manufacturers of this product is ST Microelectronics.

See the preview image and the PDF file for more information.

Preview images :

1 page
P6NK90Z pdf datasheet

Description

The P6NK90Z is N-Channel, 900V, 5.8A, Power MOSFET (Metal Oxide Semiconductor Field Effect Transistor). This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

The SuperMESH series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

Features

1. TYPICAL RDS(on) = 1.56 W

2. EXTREMELY HIGH dv/dt CAPABILITY

3. 100% AVALANCHE TESTED

4. GATE CHARGE MINIMIZED

5. VERY LOW INTRINSIC CAPACITANCES

6. VERY GOOD MANUFACTURING REPEATIBILITY

P6NK90Z transistor pinout

Applications:

1. HIGH CURRENT, HIGH SPEED SWITCHING

2. IDEAL FOR OFF-LINE POWER SUPPLIES, ADAPTORS AND PFC

3. LIGHTING

P6NK90Z PDF Datasheet

J599 PDF Datasheet – P-Ch, MOSFET – 2SJ599 – NEC ( PDF )

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This post explains for the transistor J599.

The Part Number is 2SJ599.

The function of this semiconductor is P-Channel MOSFET.

The package is TO-251, TO-252 Type

Manufacturer: NEC

Preview images :

1 page
J599 transistor pinout

Description

The J599 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver.

The MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a type of MOSFET that is constructed using a p-type substrate. MOSFETs are electronic devices that are widely used as switches or amplifiers in electronic circuits.

Features

• Low on-state resistance :

(1) RDS(on)1 = 75 mΩ MAX. (VGS = –10 V, ID = –10 A)

(2) RDS(on)2 = 111 mΩ MAX. (VGS = –4.0 V, ID = –10 A)

• Low Ciss: Ciss = 1300 pF TYP.

• Built-in gate protection diode

• TO-251/TO-252 package 2SJ599-Z

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = – 60 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 20 A

4. Channel dissipation: Pch = 1 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

2 page
J599 pdf datasheet

J599 PDF Datasheet

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