Transistor

C2328 PDF Datasheet – 30V, Silicon NPN Transistor

Posted on by pinout

Part Number: C2328

Function: 30V, Silicon NPN Epitaxial Transistor

Chip size: 760um×760um

Manufacturer: ETC

Images:C2328 pdf npn transistor

Description

This is Silicon NPN Epitaxial Transistor. The C2328 is designed for use in power amplifier applications and power switching applications.

NPN transistors are bipolar junction transistors (BJT), meaning they have a structure consisting of three regions of alternating P-type and N-type semiconductors.

Features

1.  Low collector saturation voltage

2. Complementary to A1020

Chip Appearance :

Chip Size Chip Thickness Bonding Pad Size Front Metal Backside Metal Scribe line width Wafer Size Base Emitter 760um×760um 210±20um 160×170um 130×260um Al Au(As) 60um 6 inch Electrical Characteristics( Ta=25℃) Characteristic Symbol Test Condition Collector Cutoff Current Emitter Cutoff Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain ICBO IEBO BVCBO BVCEO BVEBO hFE VCB=30V, IE=0 VEB=5V, IC=0 IC=0.1mA IC=10mA IE=0.1mA VCE=2V, IC=0.5A Collector Saturation Voltage VCE(sat) IC=1A, IB=50mA Min Max 0.1 0.1 30 30 5.0 80 400 0.5 Unit uA uA V V V V May.2004 Version :0.0 Page 1 of 1 […]

 

C2328 PDF Datasheet

A1268 Transistor – 120V, 100mA, PNP, Equivalent, KTA1268

Posted on by pinout

Part Number: A1268, KTA1268

Function: – 120V, – 100mA, Silicon PNP Transistor

Package: TO-92 Type

Manufacturer: KEC

Images:A1268 pinout datasheet

Description

The A1268 is Silicon PNP Transistor.

1. Current flow: When a small current is applied to the base terminal, it allows a much larger current to flow from the emitter to the collector. This is called amplification or gain, and it makes the PNP transistor useful as an electronic switch or amplifier.

2. Voltage levels: The voltage levels in a PNP transistor are opposite to those in an NPN transistor. In a NPN transistor, the base-emitter junction is forward-biased and the collector-base junction is reverse-biased.

3. Biasing: PNP transistors are biased in the opposite direction to NPN transistors. To turn on a PNP transistor, the base must be more negative than the emitter, and to turn it off, the base must be more positive than the emitter.

[…]

Features

1. Low Noise.

(1) NF=3dB(Typ.), Rg=100Ω,  VCE=-6V, IC=-100 μA, f=1kHz

(2) NF=0.5dB(Typ.), Rg=1kΩ, VCE=-6V, IC=-100 μA, f=1kHz.

2. High DC Current Gain : hFE=200?700.

3. High Voltage : VCEO=-120V.

4. Low Pulse Noise. Low 1/f Noise.

5. Complementary to KTC3200.

 

A1268 transistor

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = – 120 V

2. Collector to Emitter Voltage: Vceo = – 120 V

3. Emitter to Base Voltage: Vebo = – 5 V

4. Collector Current: Ic = – 100 mA

5. Collector Dissipation : Pc = 625 mW

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

Applications:

1. Low noise amplifier

2. High voltage

 

A1268 PDF Datasheet